51
FEATURES
Identical Channel to Channel Footprint
Current Transfer Ratio (CTR) Range at
I
F
=10 mA
ILD/Q615-1: 40 80% Min.
ILD/Q615-2: 63 125% Min.
ILD/Q615-3: 100 200% Min.
ILD/Q615-4: 160 320% Min.
Guaranteed CTR at I
F
=1 mA
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.
High Collector-Emitter Voltage BV
CEO
=70 V
Dual and Quad Packages Feature:
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
Field-Effect Stable by TRIOS (TR
ansparent
IO
n
S
hield
)
Isolation Test Voltage from Double Molded
Package, 5300 VAC
RMS
UL Approval #E52744
VDE #0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current .................................................1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25
C ................... 1.33 mW/
C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage .................... 7 V
Collector Current .......................................... 50 mA
Collector Current (t <1 ms) .........................100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25
C........................ 2 mW/
C
Package
Storage Temperature................... 55
C to +150
C
Operating Temperature ............... 55
C to +100
C
Junction Temperature.................................... 100
C
Soldering Temperature
(2 mm distance from case bottom) ........... 260
C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25
C.................. 5.33 mW/
C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25
C................. 6.67 mW/
C
Isolation Test Voltage (t=1 sec.) ........ 5300 VAC
RMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Isolation Resistance
V
IO
=500 V, T
A
=25
C ...............................
10
12
V
IO
=500 V, T
A
=100
C .............................
10
11
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VAC
PEAK
and a Working Voltage of 1700 VAC
RMS
.
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
an I
F
=1 mA.
See Appnote 45, "How to Use Optocoupler Normalized Curves."
Dimensions in inches (mm)
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4
Typ.
.100 (2.54) Typ.
10
Typ.
3
9
.305 Typ.
(7.75) Typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
8
7
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
1
2
3
4
8
7
6
5
Collector
Emitter
Collector
Emitter
Anode
Cathode
Anode
Cathode
Collector
Emitter
Collector
Emitter
Collector
Emitter
Collector
Emitter
Anode
Cathode
Anode
Cathode
Anode
Cathode
Anode
Cathode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4
Typ.
.100 (2.54) Typ.
10
Typ.
3
9
.305 Typ.
(7.75) Typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin
One
I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
DUAL CHANNEL
ILD615
QUAD CHANNEL
ILQ615
PHOTOTRANSISTOR OPTOCOUPLER
52
ILD/Q615
Characteristics,
T
A
=25
C
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1
1.15
1.3
V
I
F
=10 mA
Breakdown Voltage
V
BR
6
30
V
I
R
=10
A
Reverse Current
I
F
0.01
10
A
V
R
=6 V
Capacitance
C
O
25
pF
V
R
=0 V, f=1 MHz
Thermal Resistance, Junction to Lead
R
THJL
750
C/W
Detector
Capacitance
C
CE
6.8
pF
V
CE
=5 V, f=1 MHz
Collector-Emitter Leakage Current, -1, -2
I
CEO
2
50
nA
V
CE
=10 V
Collector-Emitter Leakage Current, -3, -4
I
CEO
5
100
nA
V
CE
=10 V
Collector-Emitter Breakdown Voltage
BV
CEO
70
V
I
CE
=0.5 mA
Emitter-Collector Breakdown Voltage
BV
ECO
7
V
I
E
=0.1 mA
Thermal Resistance, Junction to Lead
R
THJL
500
C/W
Package Transfer Characteristics
Channel/Channel CTR Match
CTRX/CTRY
1 to 1
2 to 1
I
F
=10 mA, V
CE
=5 V
ILD/Q615-1
Saturated Current Transfer Ratio
CTR
CEsat
25
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio
CTR
CE
40
60
80
%
I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio
CTR
CE
13
30
%
I
F
=1 mA, V
CE
=5 V
ILD/Q615-2
Saturated Current Transfer Ratio
CTR
CEsat
40
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio
CTR
CE
63
80
125
%
I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio
CTR
CE
22
45
%
I
F
=1 mA, V
CE
=5 V
ILD/Q615-3
Saturated Current Transfer Ratio
CTR
CEsat
60
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio
CTR
CE
100
150
200
%
I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio
CTR
CE
34
70
%
I
F
=1 mA, V
CE
=5 V
ILD/Q615-4
Saturated Current Transfer Ratio
CTR
CEsat
100
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio
CTR
CE
160
200
320
%
I
F
=10 mA, V
CE
=5 V
Current Transfer Ratio
CTR
CE
56
90
%
I
F
=1 mA, V
CE
=5 V
Isolation and Insulation
Common Mode Rejection, Output High
CMH
5000
V/
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=0 mA
Common Mode Rejection, Output Low
CML
5000
V/
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=10 mA
Common Mode Coupling Capacitance
C
CM
0.01
pF
Package Capacitance
CI-O
0.8
pF
V
IO
=0 V, f=1 MHz
Insulation Resistance
R
S
10
14
V
IO
=500 V, T
A
=25
C
Channel to Channel Isolation
500
VAC
53
ILD/Q615
Switching Times
Figure 1. Non-saturated switching timing
Figure 2. Saturated switching timing
Figure 3. Non-saturated switching timing
Figure 4. Saturated switching timing
V
O
V
CC
=5 V
R
L
=75
F=10 KHz,
DF=50%
I
F
=10 mA
V
O
V
CC
=5 V
R
L
F=10 KHz,
DF=50%
V
0
I
F
t
PHL
t
S
t
R
t
F
t
D
50%
t
PLH
I
F
t
R
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V
TH
=1.5 V
Figure 5. Maximum LED current versus ambient temperature
Parameter
Typ.
Unit
Test
Condition
t
ON
3.0
s
R
L
=75
I
F
=10 mA
V
CC
=5 V
t
R
2.0
s
t
OFF
2.3
s
t
F
2.0
s
t
PHL
Propagation H-L (50% of V
PP
)
1.1
s
t
PHL
Propagation L-H
2.5
s
Parameter
-1
I
F
=20 mA
-1,-3
I
F
=10 mA
-4
I
F
=5mA
Test
Condition
Typ.
Typ.
Typ.
Unit
t
ON
3.0
4.3
6.0
s
R
L
=1
V
CC
=5 V
V
TH
=1.5 V
t
R
2.0
2.8
4.6
s
t
OFF
18
25
25
s
t
F
11
14
15
s
t
PHL
Propagation
H-L
1.6
2.6
5.4
s
t
PLH
Propagation
L-H
8.6
7.2
7.4
s
--60 -40 -20 0 20 40 60 80 100
120
100
80
60
40
0
20
Ta - Ambient Temperature -
C
IF - Maximum LED Current - mA
TJ (MAX)=100
C
54
ILD/Q615
Figure 6. Maximum LED power dissipation
Figure 7. Forward voltage versus forward current
Figure 8. Peak LED current versus pulse detection, Tau
Figure 9. Maximum detector power dissipation
--60 -40 -20 0 20 40 60 80 100
200
100
0
50
Ta - Ambient Temperature -
C
P
LED
- LED Power - mW
150
100
10
1
.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current - mA
VF - Forward Voltage - V
Ta = -55
C
Ta = 25
C
Ta = 85
C
10-6
10-5
10-4
10-3
10-2
10-1
100
10 1
10
100
1000
10000
t - LED Pulse Duration - s
If(pk) - Peak LED Current - mA
.005
.05
.02
.01
.1
.2
.5
Duty Factor
t
DF = /t
-60
-40
-20
0
20
40
60
80
100
0
50
100
150
200
Ta - Ambient Temperature -
C
P - Detector Power - mW
DET
Figure 10. Maximum collector current versus collector
voltage
Figure 11. Normalization factor for non-saturated
and saturated CTR T
A
=25
C versus if
Figure 12. Normalization factor for non-saturated
and saturated CTR T
A
=50
C versus if
Figure 13. Normalization factor for non-saturated
and saturated CTR T
A
=70
C versus if
.1
1
10
100
.1
1
10
100
1000
Vce - Collector-Emitter Voltage - V
Ice - Collector Current - mA
25
C
50
C
75
C
90
C
Rth = 500
C/W
.1
1
10
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 25
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
.1
1
10
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 50
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
.1
1
10
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 70
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
55
ILD/Q615
Figure 14. Normalization factor for non-saturated
and saturated CTR T
A
=85
C versus if
Figure 15. Collector-emitter current versus temperature
and LED current
Figure 16. Collector-emitter leakage versus
temperature
.1
1
10
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
Vce = 10V, IF = 5mA, Ta = 25
C
Ta = 100
C
CTRce(sat) Vce = 0.4V
CTRNF - Normalized CTR Factor
IF - LED Current - mA
NCTRce(sat)
NCTRce
Ta=100
C
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50
C
70
C
85
C
IF - LED Current - mA
Ice - Collector Current - mA
25
C
100
80
60
40
20
0
-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
Ta - Ambient Temperature -
C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
Figure 17. -1 Propagation delay versus collector load re-
sistor
Figure 18. -2, -3 Propagation delay versus collector
load resistor
Figure 19. -4 Propagation delay versus collector
load resistor
.1
1
10
100
1
10
100
1000
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RL - Load Resistor - K
t
P
LH -
P
r
opa
ga
t
i
on
Low
-
H
i
gh
-
s
t
P
H
L
-
P
r
opa
ga
t
i
on H
i
gh-
Low
-
s
tPLH
tPHL
Ta = 25
C, IF = 10mA
Vcc = 5V, Vth = 1.5V
.1
1
10
100
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - K
tPLH - Propagation Low-High -
s
tPHL - Propagation High-Low -
s
tPLH
tPHL
Ta = 25
C, IF = 10mA
Vcc = 5V, Vth = 1.5V
.1
1
10
100
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - K
tPLH - Propagation Low-High -
s
tPHL - Propagation High-Low -
s
tPLH
tPHL
Ta = 25
C, IF = 10mA
Vcc = 5V, Vth = 1.5V
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