Semiconductor Group
1
NPN Silicon Darlington Transistors
SMBTA 13
SMBTA 14
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
SMBTA 13
SMBTA 14
Q68000-A6475
Q68000-A6476
s1M
s1N
SOT-23
Pin Configuration
B
E
C
1
2
3
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Emitter-base voltage
V
EB0
Collector-base voltage
V
CB0
Junction temperature
T
j
C
Total power dissipation,
T
S
= 81 C
P
tot
mW
Storage temperature range
T
stg
Collector-emitter voltage
V
CE0
V
Thermal Resistance
Junction - ambient
2)
R
th JA
280
K/W
10
330
150
65 ... + 150
30
Collector current
I
C
mA
300
Peak collector current
I
CM
500
Junction - soldering point
R
th JS
210
30
Base current
I
B
100
Peak base current
I
BM
200
q
High DC current gain
q
High collector current
q
Collector-emitter saturation voltage
5.91
Semiconductor Group
2
SMBTA 13
SMBTA 14
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
1)
SMBTA 13
SMBTA 14
I
C
= 100 mA,
V
CE
= 5 V
1)
SMBTA 13
SMBTA 14
h
FE
5000
10000
10000
20000
V
Collector-emitter breakdown voltage
I
C
= 10
A
V
(BR)CE0
30
nA
Collector-base cutoff current
V
CB
= 30 V
I
CB0
100
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR)EB0
10
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
V
CEsat
1.5
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
125
AC characteristics
Collector-base breakdown voltage
I
C
= 10
A
V
(BR)CB0
30
Emitter-base cutoff current
V
EB
= 10 V
I
EB0
100
Base-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
V
BEsat
2
1)
Pulse test conditions:
t
300
s,
D
= 2 %.
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