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Электронный компонент: AP122-89

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Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
1
Specifications subject to change without notice. 3/99A
AP122-89
Preliminary
GaAs IC 3 Stage DCS/PCS Power Amplifier
Features
+3.5 V Operation
Output Power of 33 dBm
Large Signal Gain of 30 dB
Power Added Efficiency of 50%
Outstanding Efficiency vs. Supply Voltage
High Power SSOP-16 Package with
Exposed Pad
Wide Power Control Range (70 dB)
Designed to work with AP121-89 as a
Dualband Solution
SSOP-16 with Exposed Pad
0.197 (5.00 mm)
0.189 (4.80 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
0.244
(6.20 mm)
0.228
(5.80 mm)
0.025
(0.635 mm) TYP.
PIN 1
PIN 16
0.063
(1.60 mm) MAX.
0.004 (0.10 mm)
0.000 (0.00 mm)
0.095 (2.42 mm)
0.085 (2.16 mm)
EXPOSED
PAD
0.12 (0.30 mm)
0.008 (0.20 mm)
0.135 (3.43 mm)
0.125 (3.17 mm)
Description
The AP122-89 is a low cost IC power amplifier designed for
the 17001900 MHz frequency band. It features 3.5 V battery
operation and exceptional efficiency. Drive level requirements
are minimized with 3 stages of amplification, thereby reducing
the cost of the VCO.The AP122-89 is designed to be stable
over a temperature range of -40 to +85 C and over a 10:1
output VSWR load. External matching is used for improved
performance, flexibility, and multi-band operation.
Quantity
Value
Unit
Amplifier Supply Voltage (V
DS
)
10
V
Input RF Power (P
IN
)
17
dBm
Duty Cycle
50
%
Operating Temperature (T
OP
)
-40 to +85
C
Storage Temperature (T
ST
)
-65 to +150
C
Absolute Maximum Ratings
Output Matching Circuit
The output match for the AP122-89 is provided externally
in order to improve performance, reduce cost, and add
flexibility. By making use of ceramic surface mount
components with better Qs than GaAs matching
elements, a lower loss matching network can be made.
This lower loss results in higher power and efficiency for
the amplifier. Also, by keeping these elements external the
GaAs die size is reduced and the overall cost is less. This
approach also permits the flexibility to tweak the amplifier
for optimum performance at different powers, and/or
frequencies.
GaAs IC 3 Stage DCS/PCS Power Amplifier
AP122-89
2
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 3/99A
Quantity
Symbol
Condition
Min.
Typ.
Max.
Unit
Output Power
P
OUT
T
OP
= +25C
32.5
33
dBm
V
DS
= 2.8 V,
29.5
30.5
T
OP
= (-40 to +85C)
Power Added Efficiency
n
PAE
45
50
%
Control Voltage Range
V
GG
-3
-1
V
2nd Harmonic Distortion
H
2
-40
-35
dBc
3rd Harmonic Distortion
H
3
-40
-35
dBc
Input VSWR
VSWR
IN
P
OUT
(032 dBm), Controlled by V
GG
3:1
2:1
Forward Isolation
P
OUT, STANDBY
P
IN
= 10 dBm, V
GG
= -3.0 V
-49
-40
dBm
Switching Time
t
R
, t
F
Time from P
OUT
= -10 dBm
1
2
S
to P
OUT
= 33 dBm
Burn Out
BO
V
DS
= 2.8 V to 6.0 V,
No Module Damage
P
IN
= 0 dBm to 10 dBm,
or Permanent Degradation
Z
S
= 50
, Load
VSWR = 10:1, All Phase Angles
Stability
Stab.
All Combinations of the Following
No Parasitic Oscillations
Parameters: I
DS
= 0A to xA,
Above -36 dBm
x = Current at P
OUT
= 33 dBm in 50
P
IN
= 0 dBm to 10 dBm,
V
DD
= 2.5 V to 4.5 V,
T
OP
= -40 to +85C,
Load VSWR = 10:1, All Phase Angles
Slope P
OUT
/V
GG
P
OUT
= -15 dBm to 33 dBm
10
100
150
dB/V
Noise Power
100 KHz BW
-85
-79
dBm
1805-1880 MHz Band
Phase Change
The Change in Phase When
5
10
Deg.
P
OUT
Changes from 31 dBm to 32 dBm
Electrical Specifications at 25C
Characteristic Values:
P
IN
= 6 dBm
fc = 17101785 MHz
V
DS
= 3.5 V
T
OP
= +25C
V
GG
= Switched at 217 Hz with Duty Cycle of 12.5%
GaAs IC 3 Stage DCS/PCS Power Amplifier
AP122-89
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
3
Specifications subject to change without notice. 3/99A
PAE (%)
DCS PA - Gate Sweep
P
IN
= 3 dBm, V
DD
= 3.5 V,
Frequency = 1.785 GHz
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
-3.0 -2.8 -2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1
0
10
20
30
40
50
60
70
V
GG
(V)
Output Power (dBm)
P
OUT
PAE
DCS PA - Power Sweep
V
G
= -1.2 V, V
DD
= 3.5 V,
Frequency = 1.785 GHz
5
10
15
20
25
30
35
40
-1
-3
-5
-7
-9
-11
-13
-15
7
5
3
1
Input Power (dBm)
P
OUT
(dBm) & Gain (dB)
0
10
20
30
40
50
60
70
PAE (%)
P
OUT
Gain
PAE
PAE (%)
DCS PA - Gate Sweep
P
IN
= 3 dBm, V
DD
= 2.8 V,
Frequency = 1.785 GHz
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
-3.0 -2.8 -2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1
V
GG
(V)
Output Power (dBm)
-10
0
10
20
30
40
50
60
P
OUT
PAE
PAE (%)
DCS PA - Power Sweep
V
G
= -1.2 V, V
DD
= 2.8 V,
Frequency = 1.785 GHz
5
10
15
20
25
30
35
40
-15 -13 -11 -9 -7 -5 -3 -1
1
3
5
7
Input Power (dBm)
P
OUT
(dBm) & Gain (dB)
0
10
20
30
40
50
60
70
P
OUT
Gain
PAE
Typical Performance Data
GaAs IC 3 Stage DCS/PCS Power Amplifier
AP122-89
4
Skyworks Solutions, Inc. [978] 241-7000
Fax [978] 241-7906
Email sales@skyworksinc.com
www.skyworksinc.com
Specifications subject to change without notice. 3/99A
Pin Out
1
V
GS1
RF In
GND
GND
V
DS1
GND
V
DS2
GND
V
GS2
V
GS3
GND
GND
RF Out
RF Out
RF Out/V
DS3
GND
23
45
6
8
16
15
14
13
12
11
9
7
10
Pin Configuration
Terminal
Symbol
Function
1
V
GS1
Stage 1 Gate Bias
2
RF In
RF Input
3
GND
Ground
4
GND
Ground
5
V
DS1
Stage 1 Drain Voltage
6
GND
Ground
7
V
DS2
Stage 2 Drain Voltage
8
GND
Ground
9
GND
Ground
10
RF Out/V
DS3
RF Output/Stage 3 Drain Voltage
11
RF Out
RF Output
12
RF Out
RF Output
13
GND
Ground
14
GND
Ground
15
V
GS3
Stage 3 Gate Bias
16
V
GS2
Stage 2 Gate Bias