Rev 1
September 2005
1/8
8
ESDA6V1xxM6
TRANSILTM array for ESD protection
Main applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Features
4 unidirectional TRANSIL diodes
(ESDA6V1M6)
5 unidirectional TRANSIL diodes
(ESDA6V1-5M6)
Breakdown Voltage V
BR
= 6.1 V min
High peak power dissipation:
100 Watts 8/20 s
Low leakage current < 500 nA
Low diode capacitance (70 pF typ at 0V)
Very small PCB area: 1.45 mm
500 microns pitch
Leadfree package
Description
The ESDA6V1xxM6 is monolithic arrays designed
to protect up to 4 or 5 lines against ESD
transients.
The device is ideal for applications where both
reduced print circuit board space and power
absorption capability are required.
Benefits
High ESD protection level
High integration
Suitable for high density boards
Functional diagram
Order Code
Complies with the following standards:
TM: TRANSIL is a trademark of STMicroelectronics
Part number
Marking
ESDA6V1M6
I
ESDA6V1-5M6
J
IEC61000-4-2
15 kV
(air discharge)
8 kV
(contact discharge)
MIL STD 883E- Method 3015-7: class3
25 kV
(human body model)
Micro DFN Package
I/O1
I/O1
6
6
4
4
I/O5
I/O5
I/O3
I/O3
5
5
GND
GND
3
3
2
2
1
1
I/O2
I/O2
GND
I/O4
ESDA6V1M6
ESDA6V1-5M6
www.st.com
1 Characteristics
ESDA6V1xxM6
2/8
1 Characteristics
1.1
Absolute maximum ratings (T
amb
= 25 C)
1.2
Electrical characteristics (T
amb
= 25 C)
Symbol
Parameter
Value
Unit
V
PP
ESD discharge IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
15
8
kV
P
PP
Peak pulse power dissipation (8/20 s)
(1)
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
T
j
initial = T
amb
100
W
I
pp
Repetitive peak pulse current typical value (8/20 s)
8
A
T
j
Junction temperature
125
C
T
stg
Storage temperature range
-55 + 150
C
T
L
Maximum lead temperature for soldering during 10 s at 5 mm for case
260
C
T
OP
Operating temperature range
-40 + 125
C
Symbol
Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
I
PP
Peak pulse current
T
Voltage temperature coefficient
V
F
Forward voltage drop
Parameter
Test Condition
Min
Typ
Max
Unit
V
BR
I
R
= 1 mA
6.1
7.2
V
I
RM
V
RM
= 3 V
500
nA
V
F
I
F
= 10 mA
1
V
R
d
1
T
(1)
1.
V
BR
=
T * (T
amb
- 25 C) * V
BR
(25 C)
I
R
= 1 mA
5
10
-4
/C
C
V
R
=0 V DC, F
= 1 MHz, V
osc
= 30 mV
RMS
70
pF
V
V
V
I RM
I R
I PP
V
I
I F
V
V
Slope= 1/ Rd
V
V
CL
V
BR
RM
V
F
ESDA6V1xxM6
1 Characteristics
3/8
Figure 1.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 2.
Peak pulse power versus
exponential pulse duration
Figure 3.
Clamping voltage versus peak pulse
current (typical values, rectangular
waveform)
Figure 4.
Forward voltage drop versus peak
forward current (typical values)
Figure 5.
Junction capacitance vesus reverse
voltage applied (typical values)
Figure 6.
Relative variation of leakage current
versus junction temperature (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
P
PP
[ T
j
i n it i al ] /P
PP
[ T
j
i n it i al = 2 5
]
T
j
(C)
C
10
100
1000
1
10
100
P
P P
( W )
T
j
initial = 25C
t
P
(s)
0.1
1.0
10.0
100.0
0
10
20
30
40
50
60
70
I
P P
( A)
8/20s
T
j
initial =25C
V
CL
(V)
1.E-03
1.E-02
1.E-01
1.E+00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
F M
( A)
T
j
=25C
T
j
=125C
V
FM
(V)
0
10
20
30
40
50
60
70
80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
C ( p F )
F=1MHz
V
OSC
=30mV
RMS
T
j
=25C
V
R
(V)
1
10
100
25
50
75
100
125
I
R
[ T
j
] / I
R
[ T
j
= 2 5
]
V
R
=3V
C
T
j
(C)
1 Characteristics
ESDA6V1xxM6
4/8
Figure 7.
S21 attenuation measurement
results of each channel
Figure 8.
Analog crosstalk measurements
between channels
Figure 9.
ESD response to IEC6100-4-2
(+15 kV air discharge) on each
channel
Figure 10. ESD response to IEC6100-4-2
(-15 kV air discharge) on each
channel
100.0k
1.0M
10.0M
100.0M
1.0G
-40.00
-30.00
-20.00
-10.00
0.00
dB
f/Hz
100.0k
1.0M
10.0M
100.0M
1.0G
-120.00
-90.00
-60.00
-30.00
0.00
dB
f/Hz
35V
-30V
ESDA6V1xxM6
2 Ordering information scheme
5/8
2 Ordering
information
scheme
3 Package
information
Table 1.
Mechanical data
REF
DIMENSIONS
Millimeters
Inches
Min
Typ
Max
Min
Typ
Max
A
0.50 0.55
0.60
0.20
0.22
0.24
A1
0.00 0.02
0.05
0.00
0.01
0.02
b
0.18 0.25
0.30
0.07
0.10
0.12
D
1.45
0.57
E
1.00
0.39
e
0.50
0.20
k
0.20
0.08
L
0.30 0.35
0.40
0.12
0.14
0.16
ESDA 6V1 xx M6
ESD Array
Package
M6 = Micro DFN 6 leads
Breakdown voltage
Number of lines
6V1 = 6.1 Volts min
blank = 4 line
-5 = 5 line protection
D
E
1
1
2
2
L
k
b
e
A
A1
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