MMBT3904
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
s
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s
TAPE AND REEL PACKING
s
THE PNP COMPLEMENTARY TYPE IS
MMBT3906
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
June 2002
SOT-23
Type
Marking
MMBT3904
34
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
60
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
40
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
200
mA
P
tot
Total Dissipation at T
C
= 25
o
C
350
mW
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
357.1
o
C/W
Device mounted on a PCB area of 1 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
V
CE
= 30 V
50
nA
I
BEX
Base Cut-off Current
(V
BE
= -3 V)
V
CE
= 30 V
50
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 1 mA
40
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= 10
A
60
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
A
6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA I
B
= 1 mA
I
C
= 50 mA I
B
= 5 mA
0.2
0.2
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10 mA I
B
= 1 mA
I
C
= 50 mA I
B
= 5 mA
0.65
0.85
0.95
V
V
h
FE
DC Current Gain
I
C
= 0.1 mA V
CE
= 1 V
I
C
= 1 mA V
CE
= 1 V
I
C
= 10 mA V
CE
= 1 V
I
C
= 50 mA V
CE
= 1 V
I
C
= 100 mA V
CE
= 1 V
60
80
100
60
30
300
f
T
Transition Frequency
I
C
= 10 mA V
CE
= 20 V f = 100 MHz
250
270
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1 MHz
4
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= 0.5 V f = 1MHz
18
pF
NF
Noise Figure
V
CE
= 5 V I
C
= 0.1 mA f = 10 Hz
to 15.7 KHz R
G
= 1 K
5
dB
t
d
t
r
Delay Time
Rise Time
I
C
= 10 mA I
B
= 1 mA
V
CC
= 30 V
35
35
ns
ns
t
s
t
f
Storage Time
Fall Time
I
C
= 10 mA I
B1
= -I
B2
= 1 mA
V
CC
= 30 V
200
50
ns
ns
Pulsed: Pulse duration = 300
s, duty cycle
2 %
MMBT3904
2/4
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.85
1.1
33.4
43.3
B
0.65
0.95
25.6
37.4
C
1.20
1.4
47.2
55.1
D
2.80
3
110.2
118
E
0.95
1.05
37.4
41.3
F
1.9
2.05
74.8
80.7
G
2.1
2.5
82.6
98.4
H
0.38
0.48
14.9
18.8
L
0.3
0.6
11.8
23.6
M
0
0.1
0
3.9
N
0.3
0.65
11.8
25.6
O
0.09
0.17
3.5
6.7
0044616/B
SOT-23 MECHANICAL DATA
MMBT3904
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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MMBT3904
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