1/13
June, 17 2003
PD55003L
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 3 W with 17 dB gain @ 500 MHz / 12.5 V
NEW LEADLESS PLASTIC PACKAGE
ESD PROTECTION
SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD55003L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L boasts the excellent gain,
linearity and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLATTM.
PD55003L's superior linearity performance makes
it an ideal solution for car mobile radio.
ORDER CODE
PD55003L
BRANDING
55003
PowerFLAT
TM
(5x5)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
40
V
V
GS
Gate-Source Voltage
-0.5 to +15
V
I
D
Drain Current
2.5
A
P
DISS
Power Dissipation (@ Tc = 70C)
14
W
Tj
Max. Operating Junction Temperature
150
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
5.7
C/W
PIN CONNECTION
TOP VIEW
PD55003L
2/13
ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
DYNAMIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
A
I
GSS
V
GS
= 20 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 10 V
I
D
= 50 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 0.5 A
0.36
V
G
FS
V
DS
= 10 V
I
D
= 1 A
1.0
mho
C
ISS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
34
pF
C
OSS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
23
pF
C
RSS
V
GS
= 0 V
V
DS
= 12.5 V
f = 1 MHz
1.8
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
1dB
V
DD
= 12.5 V I
DQ
= 50 mA
f = 500 MHz
3
W
G
P
V
DD
= 12.5 V I
DQ
= 50 mA
P
OUT
= 3 W
f = 500 MHz
17
19
dB
D
V
DD
= 12.5 V I
DQ
= 50 mA
P
OUT
= 3 W
f = 500 MHz
50
52
%
Load
mismatch
V
DD
= 15.5 V I
DQ
= 50 mA
P
OUT
= 3 W
f = 500 MHz
ALL PHASE ANGLES
20:1
VSWR
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
480
1.79 - j 4.96
10.68 + j 7.45
500
1.88 - j 5.93
10.28 + j 8.92
520
2.10 - j 7.03
9.86 + j 10.18
IMPEDANCE DATA
ESD PROTECTION CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL
Test Conditions
Class
Human Body Model
2
Machine Model
M3
Test Methodology
Rating
J-STD-020B
MSL 3
3/13
PD55003L
Capacitance Vs Supply Voltage
1
1 0
10 0
100 0
0
2
4
6
8
1 0
12
14
16
Vds (V)
C (
p
F
)
C o s s
C is s
C rs s
f = 1 M H z
TYPICAL PERFORMANCE
Output Power Vs Input Power
0
1
2
3
4
5
6
0
25
50
75
100
125
Pin (mW)
P
out (
W
)
Idq = 50 mA
Vds = 12.5 V
f = 500 MHz
Idq = 70 mA
Power Gain Vs Output Power
10
12
14
16
18
20
22
24
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Pout (W)
Gp
(
d
B
)
Idq = 50 mA
Idq = 20 mA
Idq = 30 mA
Vds = 12.5 V
f = 500 MHz
Idq = 70mA
Efficiency Vs Output Power
0
10
20
30
40
50
60
70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Pout (W)
Nd
(
%
)
Idq = 50 mA
Vds = 12.5 V
f = 500 MHz
Idq = 70 mA
Output Power Vs Bias Current
0
1
2
3
4
5
6
7
0
50
100
150
200
250
300
350
400
450
500
Idq (mA)
P
out (
W
)
Pin = 20 dBm
f = 500 MHz
Vdd = 12.5 V
Input Return Loss Vs Output Power
-30
-25
-20
-15
-10
-5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Pout (W)
RL
(
d
B
)
Idq = 50 mA
Vds = 12.5 V
f = 500 MHz
Idq = 70 mA
PD55003L
4/13
Efficiency Vs Bias Current
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
Idq (mA)
Nd
(
%
)
Pin = 20 dBm
f = 500 MHz
Vdd = 12.5 V
TYPICAL PERFORMANCE
Output Power Vs Supply Voltage
0
1
2
3
4
5
6
7
8
5
6
7
8
9
10
11
12
13
14
15
Vds (V)
P
out (
W
)
Idq = 50 mA
Pin = 20 dBm
f = 500 MHz
Output Power Vs Gate-Source Voltage
0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Vgs (V)
P
out (
W
)
Pin = 20 dBm
Vdd = 12.5 V
f = 500 MHz
PDF 
ZIP