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PRELIMINARY DATA
May 2000
PD57045
PD57045S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 45 W with 13 dB gain @ 945 MHz / 28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57045 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST's latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045's su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
BRANDING
PowerSO-10RF
(Straight Lead)
ORDER CODE
BRANDING
PD57045
XPD57045
PD57045S
XPD57045S
ABSOLUTE MAXIMUM RATINGS(T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
GS
Gate-Source Voltage
20
V
I
D
Drain Current
5
A
P
DISS
Power Dissipation (@ Tc = 70
0
C)
73
W
T
j
Max. Operating Junction Temperature
165
0
C
T
STG
Storage Temperature
-65 to 165
0
C
THERMAL DATA (T
CASE
= 70
0
C)
R
th(j-c)
Junction-Case Thermal Resistance
1.3
0
C/W
PD57045 PD57045S
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PIN CONNECTION
SOURCE
DRAIN
GATE
SC15200
ELECTRICAL SPECIFICATION(T
CASE
= 25
0
C)
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 1 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
A
I
GSS
V
GS
= 20 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= 250 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 3 A
0.7
0.9
V
g
FS
V
DS
= 10 V
I
D
= 5 A
2.0
2.7
mho
C
ISS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
86
pF
C
OSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
47
pF
C
RSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
3.6
pF
DYNAMIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
P
OUT
V
DD
= 28 V
f = 945 MHz
I
DQ
= 250 mA
45
W
G
PS
V
DD
= 28 V
f = 945 MHz
P
OUT
= 45 W
I
DQ
= 250 mA
13
14.5
dB
D
V
DD
= 28 V
f = 945 MHz
P
OUT
= 45 W
I
DQ
= 250 mA
50
%
LOAD
Mismatch
V
DD
= 28 V
f = 945 MHz
P
OUT
= 45 W
I
DQ
= 250 mA
ALL PHASE ANGLES
10:1
VSWR
D
S
G
Z
DL
SC13140
Typical Input
Zin
Typical Drain
Load Impedance
Impedance
IMPEDANCE DATA
PD57045S
Frequency
MHz
Zin
Zdl
945
.80 + j 1.24
1.66 - j.44
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PD57045 PD57045S
Capacitance vs. Drain Voltage
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
C,
CAPACITANCE
(pF)
Ciss
Coss
Crss
f=1 MHz
Drain Current vs. Gate Voltage
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
ID,
DRAIN
CURRENT
(A)
Vds=10V
Gate-Source Voltage vs. Case Temperature
-25
0
25
50
75
Tc, CASE TEMPERATURE (
C)
0.96
0.98
1
1.02
1.04
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED)
I
D
= 1.5A
I
D
= 2A
I
D
= 3A
V
DS
= 10 V
I
D
= .25A
I
D
= 1 A
TYPICAL PERFORMANCE
PD57045 PD57045S
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Output Power and Power Gain vs. Input Power
0
0.5
1
1.5
2
2.5
3
3.5
Pin, INPUT POWER (W)
0
10
20
30
40
50
60
Pout,
OUTPUT
POWER
(W)
10
11
12
13
14
15
16
Gp,
POWER
GAIN
(dB)
Gp
Pout
V
DD
=28 V
I
DQ
=250 mA
f= 945 MHz
Power Gain vs. Output Power
0.1
1
10
100
Pout, OUTPUT POWER (W)
10
11
12
13
14
15
16
17
Gp,
POWER
GAIN
(dB)
Idq= 450mA
Idq= 250mA
Idq= 150mA
Idq= 75mA
Vdd= 28V
f= 945Mhz
Drain Efficiency vs. Output Power
0
10
20
30
40
50
60
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
Nd,
DRAIN
EFFICIENCY
(%)
f= 945MHz
Vdd=28V
Idq=250mA
Return Loss vs. Output Power
0
10
20
30
40
50
60
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
Rtl,
RETURN
LOSS
(dB)
f= 945 MHz
Vdd= 28V
Idq=250mA
Output Power vs. Bias Current
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
20
30
40
50
60
Pout,
OUTPUT
POWER
(W)
Pin=1.5W
Vdd= 28V
f= 945 MHz
Drain Efficiency vs. Bias Current
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
Nd,
DRAIN
EFFICIENCY
(%)
Pin= 1.5W
Vdd= 28V
f=945 MHz
TYPICAL PERFORMANCE - PD57045S
5/8
PD57045 PD57045S
6.4 inches
4
i
nc
he
s
Output Power vs. Drain Voltage
16
18
20
22
24
26
28
30
32
34
VDS, DRAIN-SOURCE VOLTAGE (V)
10
20
30
40
50
60
70
80
Pout,
OUTPUT
POWER
(W)
Pin= 2W
Pin= 1W
Pin=3W
Pin= 1.5W
f=945MHz
Vdd= 28V
Idq=250mA
Output Power vs. Gate Bias Voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS, GATE BIAS VOLTAGE (V)
0
10
20
30
40
50
Pout,
OUTPUT
POWER
(W)
Pin= 1.5W
Vdd= 28V
f=945MHz
TYPICAL PERFORMANCE PD57045S
TEST CIRCUIT PHOTOMASTER
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