PN2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
s
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
s
THE PNP COMPLEMENTARY TYPE IS
PN2907A
APPLICATIONS
s
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Emitter Voltage (I
E
= 0)
75
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
40
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
0.6
A
I
CM
Collector Peak Current (t
p
< 5 ms)
0.8
A
P
tot
Total Dissipation at T
amb
= 25
o
C
500
mW
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
Ordering Code
Marking
Package / Shipment
PN2222A
PN2222A TO-92 / Bulk
PN2222A-AP
PN2222A TO-92 / Ammopack
TO-92
Bulk
TO-92
Ammopack
1/6
THERMAL DATA
R
thj-amb
R
thj-ca se
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Case Max
250
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= -3 V)
V
CE
= 60 V
10
nA
I
BEX
Base Cut-off Current
(V
BE
= -3 V)
V
CE
= 60 V
20
nA
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 75 V
V
CB
= 75 V T
j
= 150
o
C
10
10
nA
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 3 V
15
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 10 mA
40
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= 10
A
75
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
A
6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.3
1
V
V
V
BE(sat)
Collector-Base
Saturation Voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.6
1.2
2
V
V
h
FE
DC Current Gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 1 V
I
C
= 500 mA V
CE
= 10 V
35
50
75
100
50
40
300
f
T
Transition Frequency
I
C
= 20 mA V
CE
= 20V f = 100MHz
270
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1 MHz
4
8
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= 0.5 V f = 1MHz
20
25
pF
NF
Noise Figure
I
C
= 0.1 mA V
CE
= 10 V f = 1 KHz
f = 200 Hz R
G
= 1 K
4
dB
h
ie
Input Impedance
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
2
0.25
8
1.25
K
K
h
re
Reverse Voltage Ratio
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
8
4
10
-4
10
-4
h
fe
Small Signal Current
Gain
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
50
75
300
375
h
oe
Output Admittance
V
CE
= 10 V I
C
= 1 mA f = 1 KHz
V
CE
= 10 V I
C
= 10 mA f = 1 KHz
5
25
35
200
S
S
Pulsed: Pulse duration = 300
s, duty cycle
2 %
PN2222A
2/6
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