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Электронный компонент: SD3931-10

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1/5
TARGET DATA
May, 27 2003
SD3931-10
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 150 W MIN. WITH 21.7 dB GAIN @
150 MHz
DESCRIPTION
The SD3931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. It is intended
for use in 100 V dc large signal applications up to
150 MHz.
PIN CONNECTION
1
3
4
2
1. Drain
2. Source
3. Gate
4. Source
M174
epoxy sealed
ORDER CODE
SD3931-10
BRANDING
SD3931-10
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain Source Voltage
250
V
V
DGR
Drain-Gate Voltage (R
GS
= 1M
)
250
V
V
GS
Gate-Source Voltage
20
V
I
D
Drain Current
10
A
P
DISS
Power Dissipation
437
W
T
j
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.4
C/W
SD3931-10
2/5
ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
DYNAMIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 100 mA
250
V
I
DSS
V
GS
= 0 V
V
DS
= 100 V
5
mA
I
GSS
V
GS
= 20 V
V
DS
= 0 V
5
A
V
GS(Q)
V
DS
= 10 V
I
D
= 250 mA
1.5
4.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 5 A
5
V
G
FS
V
DS
= 10 V
I
D
= 2.5 A
3
mho
C
ISS
V
GS
= 0 V
V
DS
= 100 V
f = 1 MHz
649
pF
C
OSS
V
GS
= 0 V
V
DS
= 100 V
f = 1 MHz
134
pF
C
RSS
V
GS
= 0 V
V
DS
= 100 V
f = 1 MHz
6
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
V
DD
= 100 V
I
DQ
= 0.2 A
f = 150 MHz
150
W
G
PS
V
DD
= 100 V
I
DQ
= 0.2 A P
OUT =
150 W
f = 150 MHz
21.7
dB
D
V
DD
= 100 V
I
DQ
= 0.2 A P
OUT
= 150 W
f = 150 MHz
TBD
%
Load
Mismatch
V
DD
= 100 V
I
DQ
= 0.2 A P
OUT =
150 W
f = 150 MHz
All Phase Angles
10:1
VSWR
IMPEDANCE DATA
FREQ. MHz
Z
IN
(
)
Z
DL
(
)
150
0.42 - j 3.1
3.4 + j 5.5
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
IMPEDANCES SCHEME
3/5
SD3931-10
Power Gain Vs Output Power
f =150 MHz
Vds=100 V
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
0
50
100
150
200
250
Pout (W)
Gp
(
d
B
)
Idq = 0.1 A
Idq = 1 A
Idq = 0.2 A
Idq = 0.3 A
Idq = 0.5 A
TYPICAL PERFORMANCE
Input Return Loss Vs Output Power
f =150 MHz
Vds = 100 V
-20
-15
-10
-5
0
0
50
100
150
200
250
Pout (W )
RL
(
d
B
)
Idq = 1 A
Idq = 0.2 A
Efficiency Vs Output Power
f =150 MHz
Vds = 100 V
10
15
20
25
30
35
40
45
50
55
60
0
50
100
150
200
250
Pout (W)
nd (
%
)
Idq = 0.2 A
Idq = 1 A
Output Power Vs Input Power
f =150 MHz
Vds = 100 V
0
50
100
150
200
250
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Pin (W )
P
out (
W
)
Idq = 0.2 A
Idq = 1 A
Drain Current Vs Gate-Source Voltage
Vds = 16 V
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
Vgs (V)
Ids
(
A
)
SD3931-10
4/5
1011000D
Controlling Dimension in Inches
M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
5.56
5.584
0.219
0.230
B
3.18
0.125
C
6.22
6.48
0.245
0.255
D
18.28
18.54
0.720
0.730
E
3.18
0.125
F
24.64
24.89
0.970
0.980
G
12.57
12.83
0.495
0.505
H
0.08
0.18
0.003
0.007
I
2.11
3.00
0.083
0.118
J
3.81
4.45
0.150
0.175
K
7.11
0.280
L
25.53
26.67
1.005
1.050
M
3.05
3.30
0.120
0.130
DIM.
5/5
SD3931-10
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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