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February 2002
.
STB16NF06L
N-CHANNEL 60V - 0.07
- 16A D
2
PAK
STripFETTM POWER MOSFET
s
TYPICAL R
DS
(on) = 0.07
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE AT 100
o
C
s
LOW THRESHOLD DRIVE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB16NF06L
60 V
<0.09
16 A
1
3
D
2
PAK
TO-263
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(1) I
SD
16A, di/dt
210A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 8A, V
DD
= 30V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuos) at T
C
= 25C
16
A
I
D
Drain Current (continuos) at T
C
= 100C
11
A
I
DM
(
)
Drain Current (pulsed)
64
A
P
tot
Total Dissipation at T
C
= 25C
45
W
Derating Factor
0.3
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
23
V/ns
E
AS (2)
Single Pulse Avalanche Energy
127
mJ
T
stg
Storage Temperature
-65 to 175
C
T
j
Max. Operating Junction Temperature
-55 to 175
C
INTERNAL SCHEMATIC DIAGRAM
STB16NF06L
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(1)
DYNAMIC
Rthj-case
Rthj-amb
T
j
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3.33
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V
I
D
= 8 A
V
GS
= 10 V
I
D
= 8 A
0.08
0.07
0.10
0.09
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 8 A
17
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
345
72
29
pF
pF
pF
3/9
STB16NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 8 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
10
37
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 16 A V
GS
= 5V
7.3
2.1
3.1
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 8 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
20
12.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 16 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A
di/dt = 100A/s
V
DD
= 16 V
T
j
= 150C
(see test circuit, Figure 5)
50
67.5
2.7
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB16NF06L
4/9
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
STB16NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
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