1/7
PRELIMINARY DATA
November 2001
STB20NM50FD
N-CHANNEL 500V - 0.20
- 20A D
2
PAK
FDmeshTMPower MOSFET (With FAST DIODE)
n
TYPICAL R
DS
(on) = 0.20
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmeshTM
associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
n
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB20NM50FD
500V
< 0.25
20 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
20
A
I
D
Drain Current (continuos) at T
C
= 100C
14
A
I
DM
(
l
)
Drain Current (pulsed)
80
A
P
TOT
Total Dissipation at T
C
= 25C
192
W
Derating Factor
0.88
W/C
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STB20NM50FD
2/7
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case
Thermal Resistance Junction-case Max
0.65
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
700
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
0.20
0.25
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
9
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1480
pF
C
oss
Output Capacitance
285
pF
C
rss
Reverse Transfer
Capacitance
34
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
130
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
3/7
STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 10A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
24
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 20A,
V
GS
= 10V
40
56
nC
Q
gs
Gate-Source Charge
13
nC
Q
gd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 20A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
9
ns
t
f
Fall Time
8.5
ns
t
c
Cross-over Time
23
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
20
A
I
SDM
(2)
Source-drain Current (pulsed)
80
A
V
SD
(1)
Forward On Voltage
I
SD
= 20A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 20A, di/dt = 100A/s,
V
DD
= 50V
(see test circuit, Figure 5)
220
ns
Q
rr
Reverse Recovery Charge
1.6
C
I
RRM
Reverse Recovery Current
15
A
STB20NM50FD
4/7
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/7
STB20NM50FD
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
D
2
PAK MECHANICAL DATA
3
STB20NM50FD
6/7
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
7/7
STB20NM50FD
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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