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1/9
March 2004
STB20PF75
P-CHANNEL 75V - 0.10
- 20A DPAK
STripFETTM II POWER MOSFET
TYPICAL R
DS
(on) = 0.10
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STB20PF75
75 V
< 0.12
20 A
ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area
(1) I
SD
20A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 10 A, V
DD
= 30V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
75
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
75
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
20
A
I
D
Drain Current (continuous) at T
C
= 100C
14
A
I
DM
(
)
Drain Current (pulsed)
80
A
P
tot
Total Dissipation at T
C
= 25C
80
W
Derating Factor
0.53
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS (2)
Single Pulse Avalanche Energy
350
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB20PF75
2/9
THERMAL DATA
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-PCB
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-PCB
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
Typ
1.88
34
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
75
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 10 A
0.10
0.12
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
= 15 V
I
D
= 10 A
15
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1150
170
70
pF
pF
pF
3/9
STB20PF75
SWITCHING ON
(*)
SWITCHING OFF
(*)
SOURCE DRAIN DIODE
(*)
(*)
Pulse width
[
300 s, duty cycle 1.5 %.
(
)
Pulse width limited by T
JMAX
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 37.5 V
I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
20
51
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=60V I
D
=20A V
GS
=10V
(See test circuit, Figure 2)
38
7
10
52
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 60 V
I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
40
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 20 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 3)
80
250
6.2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB20PF75
4/9
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
STB20PF75
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
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