STB24NF10
N - CHANNEL 100V - 0.07
- 24A TO-263
LOW GATE CHARGE STripFET
TM
POWER MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.07
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This
MOSFET
series
realized
with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable
as
primary
switch
in
advanced
high-efficiency, high-frequency isolated DC-DC
converters
for
Telecom
and
Computer
applications.
It
is
also
intended
for
any
applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
April 2000
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
G S
G ate-source Volt age
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
24
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
15
A
I
DM
(
)
Drain Current (pulsed)
96
A
P
tot
T otal Dissipation at T
c
= 25
o
C
80
W
Derating Factor
0.53
W /
o
C
dv/ dt(
1
)
Peak Diode Recovery voltage slope
9
V/ns
E
AS
(
2
)
Single Pulse Avalanche Energy
75
mJ
T
st g
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
( 2) starting T
j
= 25
o
C, I
D
=24A , V
DD
= 50V
(1) I
SD
24 A, di/dt
300A/
s, V
DD
V
(BR)DSS
, T
j
T
JMA
TYPE
V
DSS
R
DS( on )
I
D
STB24NF10
100 V
< 0.077
24 A
1
3
D
2
PAK
TO-263
(Suffix "T4")
1/6
THERMAL DATA
R
thj -case
R
thj -amb
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1.87
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
100
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
=125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 12 A
0.07
0.077
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
24
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=12 A
20
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
870
125
52
pF
pF
pF
STB24NF10
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 50 V
I
D
= 12 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
58
45
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 80 V I
D
= 24 A V
GS
= 10 V
30
6
10
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 27 V
I
D
= 12 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
49
17
ns
ns
t
d(of f)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
Vclamp = 80 V
I
D
= 24 A
R
G
= 4.7
V
G S
= 10 V
(Induct ive Load, see fig. 5)
43
36
39
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
24
96
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 24 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 24 A
di/dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
100
375
7.5
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operatingarea
STB24NF10
3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STB24NF10
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
L2
L3
L
B2
B
G
E
A
C2
D
C
A1
DETAIL "A"
DETAIL "A"
A2
P011P6/E
TO-263 (D
2
PAK) MECHANICAL DATA
STB24NF10
5/6
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