1/11
July 2003
.
STB60NF06L
STP60NF06L STP60NF06LFP
N-CHANNEL 60V - 0.012
- 60A TO-220/TO-220FP/D
2
PAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.012
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
175
o
C OPERATING RANGE
s
LOW THRESHOLD DRIVE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STB60NF06L
STP60NF06L
STP60NF06LFP
60 V
60 V
60 V
<0.014
<0.014
<0.014
60 A
60 A
60 A(*)
TO-220
1
2
3
TO-220FP
1
3
D
2
PAK
TO-263
(Suffix "T4")
1
2
3
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
due to Rth value
(1) I
SD
60A, di/dt
600A/s, V
DD
48V, T
j
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30V
Symbol
Parameter
Value
Unit
STB60NF06L
STP60NF06L
STP60NF06LFP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
15
V
I
D
Drain Current (continuous) at T
C
= 25C
60
60(*)
A
I
D
Drain Current (continuous) at T
C
= 100C
42
42(*)
A
I
DM
(
)
Drain Current (pulsed)
240
240(*)
A
P
tot
Total Dissipation at T
C
= 25C
110
30
W
Derating Factor
0.73
0.2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
20
V/ns
E
AS (2)
Single Pulse Avalanche Energy
320
mJ
V
ISO
Insulation Withstand Voltage (DC)
------
2000
V
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB60NF06L STP60NF06L/FP
2/11
THERMAL DATA
(#)Only for SMD,
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(1)
DYNAMIC
D
2
PAK
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
1.36
5.0
C/W
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
(#)
Maximum Lead Temperature For Soldering Purpose
Max
Max
62.5
35
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 15V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V
I
D
= 30 A
V
GS
= 10 V
I
D
= 30 A
0.014
0.012
0.016
0.014
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 30 A
20
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2000
360
125
pF
pF
pF
3/11
STB60NF06L STP60NF06L/FP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 30 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
35
220
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 60 A V
GS
= 4.5V
35
10
20
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30V
I
D
= 30 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
55
30
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 60A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 5)
110
250
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Safe Operating Area for TO-220FP
STB60NF06L STP60NF06L/FP
4/11
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
5/11
STB60NF06L STP60NF06L/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
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