STGB7NB60HD
N-CHANNEL 7A - 600V DPAK
PowerMESH
TM
IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
CO-PACKAGED WITH TURBOSWITCH
TM
ANTIPARALLEL DIODE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
c
= 25
o
C
14
A
I
C
Collector Current (continuous) at T
c
= 100
o
C
7
A
I
CM
(
)
Collector Current (pulsed)
56
A
P
tot
Total Dissipation at T
c
= 25
o
C
80
W
Derating Factor
0.64
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGB7NB60HD
600 V
< 2.8 V
7 A
June 1999
1
3
D
2
PAK
TO-263
(Suffix "T4")
1/8
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
1.56
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
I
C
= 250
A V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating T
j
= 25
o
C
V
CE
= Max Rating T
j
= 125
o
C
250
2000
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
=
20 V V
CE
= 0
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
3
5
V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
V
GE
= 15 V I
C
= 7 A
V
GE
= 15 V I
C
= 7 A T
j
= 125
o
C
2.3
1.9
2.8
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
=25 V I
C
= 7 A
3.5
5
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V f = 1 MHz V
GE
= 0
390
45
10
560
68
15
730
90
20
pF
pF
pF
Q
G
Q
GE
Q
GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V I
C
= 7 A V
GE
= 15 V
42
7.9
17.6
55
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V R
G
=10
T
j
= 150
o
C
28
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
Delay Time
Rise Time
V
CC
= 480 V I
C
= 7 A
V
GE
= 15 V R
G
= 10
15
48
ns
ns
(di/dt)
on
E
o n
(
r
)
Turn-on Current Slope
Turn-on Switching
Losses
V
CC
= 480 V I
C
= 7 A
R
G
= 10
V
GE
= 15 V
T
j
= 125
o
C
160
185
A/
s
J
STGB7NB60HD
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
(
r
)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V I
C
= 7 A
R
GE
= 10
V
GE
= 15 V
85
20
75
70
85
235
ns
ns
ns
ns
J
J
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
(
r
)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V I
C
= 7 A
R
GE
= 10
V
GE
= 15 V
T
j
= 125
o
C
150
50
110
110
220
405
ns
ns
ns
ns
J
J
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
7
56
A
A
V
f
Forward On-Voltage
I
f
= 7 A
I
f
= 7 A T
j
= 125
o
C
1.6
1.4
2.0
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 7 A V
R
=200 V
dI/dt = 100 A/
S T
j
= 125
o
C
100
180
3.6
ns
nC
A
(
) Pulse width limited by max. junction temperature
(
r
) Include recovery losses on the STTA506 freewheeling diode
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGB7NB60HD
3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGB7NB60HD
4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGB7NB60HD
5/8
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGB7NB60HD
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
L2
L3
L
B2
B
G
E
A
C2
D
C
A1
DET AIL "A"
DET AIL "A"
A2
P011P6/E
TO-263 (D
2
PAK) MECHANICAL DATA
STGB7NB60HD
7/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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STGB7NB60HD
8/8
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