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September 2003
STGD3NB60HD
N-CHANNEL 6A - 600V
- DPAK
PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE
s
OFF LOSSES INCLUDE TAIL CURRENT
s
LOW GATE CHARGE
s
HIGH FREQUENCY OPERATION
s
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5micro S-family, 4 micro H family
s
CO-PACKAGED WITH TURBOSWITCHTM
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHTM IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat) (Max)
@25C
I
C
@100C
STGD3NB60HD
600 V
< 2.8
V
6 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGD3NB60HDT4
GD3NB60HD
DPAK
TAPE & REEL
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STGD3NB60HD
2/10
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
10
A
I
C
Collector Current (continuous) at T
C
= 100C
6
A
I
CM
( )
Collector Current (pulsed)
24
A
P
TOT
Total Dissipation at T
C
= 25C
50
W
Derating Factor
0.4
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
2.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
50
A
V
CE
= Max Rating, T
C
= 125 C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
3
5
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A
2.4
2.8
V
V
GE
= 15V, I
C
= 3 A, Tj =125C
1.9
V
3/10
STGD3NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=3 A
2.4
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
235
33
6.6
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
21
6
7.6
27
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V
,
Tj = 125C
R
G
= 10
12
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15 V
5
11
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 3 A R
G
=10
V
GE
= 15 V,Tj = 125C
400
77
A/s
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
=3 A,
R
GE
= 10
, V
GE
= 15 V
76
ns
t
r
(V
off
)
Off Voltage Rise Time
36
ns
t
d
(
off
)
Delay Time
53
ns
t
f
Fall Time
77
ns
E
off
(**)
Turn-off Switching Loss
33
J
E
ts
Total Switching Loss
100
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
180
ns
t
r
(V
off
)
Off Voltage Rise Time
82
ns
t
d
(
off
)
Delay Time
58
ns
t
f
Fall Time
110
ns
E
off
(**)
Turn-off Switching Loss
88
J
E
ts
Total Switching Loss
165
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
1.5
12
A
A
V
f
Forward On-Voltage
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 C
1.6
1.3
2.1
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 1.5 A ,V
R
= 400 V,
Tj =125C, di/dt = 100 A/
s
95
110
2.7
ns
nC
A
STGD3NB60HD
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Thermal Impedance
Transfer Characteristics
Output Characteristics
Collector-Emitter On Voltage vs Temperature
Transconductance
5/10
STGD3NB60HD
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
STGD3NB60HD
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Emitter-collector Diode Characteristics
Total Switching Losses vs Temperature
Switching Off Safe Operating Area
Total Switching Losses vs Collector Current
7/10
STGD3NB60HD
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
STGD3NB60HD
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DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
9/10
STGD3NB60HD
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
16.4
18.4
0.645
0.724
N
50
1.968
T
22.4
0.881
BASE QTY
BULK QTY
2500
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267
0.275
B0
10.4
10.6
0.409
0.417
B1
12.1
0.476
D
1.5
1.6
0.059
0.063
D1
1.5
0.059
E
1.65
1.85
0.065
0.073
F
7.4
7.6
0.291
0.299
K0
2.55
2.75
0.100
0.108
P0
3.9
4.1
0.153
0.161
P1
7.9
8.1
0.311
0.319
P2
1.9
2.1
0.075
0.082
R
40
1.574
W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
STGD3NB60HD
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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