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September 2003
STGD3NB60KD
N-CHANNEL 6A - 600V
- DPAK
SHORT CIRCUIT PROOF PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW GATE CHARGE
s
OFF LOSSES INCLUDE TAIL CURRENT
s
HIGH FREQUENCY OPERATION
s
SHORT CIRCUIT RATED
s
LATCH CURRENT FREE OPERATION
s
CO-PACKAGED WITH TURBOSWITCHTM
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs, with outstanding
performances. The suffix "K" identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat) (Max)
@25C
I
C
(#)
@100C
STGD3NB60KD
600 V
< 2.8
V
6 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGD3NB60KDT4
GD3NB60KD
DPAK
TAPE & REEL
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STGD3NB60KD
2/10
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
(#) Calculated according to the iterative formula:
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C(#)
10
A
I
C
Collector Current (continuous) at T
C
= 100C(#)
6
A
I
CM
( )
Collector Current (pulsed)
24
A
Tsc
Short Circuit Withstand
10
s
P
TOT
Total Dissipation at T
C
= 25C
50
W
Derating Factor
0.4
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
2.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
50
A
V
CE
= Max Rating, T
C
= 125 C
100
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 3 A
2.4
2.8
V
V
GE
= 15V, I
C
= 3 A, Tj =125C
1.9
V
I
C
T
C
(
)
T
J MAX
T
C
R
THJ
C
V
CES AT MAX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------
=
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STGD3NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
=3 A
2.4
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
220
50
5.6
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
14
3.3
8
19
nC
nC
nC
tscw
Short Circuit Withstand Time
V
ce
= 0.5 BVces , V
GE
= 15 V
,
Tj = 125C , R
G
= 10
10
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, I
C
= 3 A
R
G
= 10
, V
GE
= 15 V
13.5
4.5
ns
ns
(di/dt)
on
Turn-on Current Slope
V
CC
= 480 V, I
C
= 7 A, R
G
=10
V
GE
= 15 V,Tj = 125C
500
A/s
Eon
Turn-on Switching Losses
30
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
=3 A,
R
GE
= 10
, V
GE
= 15 V
86
ns
t
r
(V
off
)
Off Voltage Rise Time
20
ns
t
d
(
off
)
Delay Time
32
ns
t
f
Fall Time
85
ns
E
off
(**)
Turn-off Switching Loss
50
J
E
ts
Total Switching Loss
78
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
190
ns
t
r
(V
off
)
Off Voltage Rise Time
55
ns
t
d
(
off
)
Delay Time
90
ns
t
f
Fall Time
130
ns
E
off
(**)
Turn-off Switching Loss
110
J
E
ts
Total Switching Loss
140
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
1.5
12
A
A
V
f
Forward On-Voltage
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 C
1.6
1.3
2.1
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 1.5 A ,V
R
= 35 V,
Tj = 125C, di/dt = 100 A/
s
95
110
2.7
ns
nC
A
STGD3NB60KD
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Transconductance
Thermal Impedance
Transfer Characteristics
Output Characteristics
Collector-Emitter On Voltage vs Temperature
5/10
STGD3NB60KD
Normalized Breakdown Voltage vs Temperature
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
Total Switching Losses vs Gate Resistance
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
STGD3NB60KD
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Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
Switching Off Safe Operating Area
Total Switching Losses vs Collector Current
7/10
STGD3NB60KD
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
STGD3NB60KD
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
9/10
STGD3NB60KD
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
16.4
18.4
0.645
0.724
N
50
1.968
T
22.4
0.881
BASE QTY
BULK QTY
2500
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267
0.275
B0
10.4
10.6
0.409
0.417
B1
12.1
0.476
D
1.5
1.6
0.059
0.063
D1
1.5
0.059
E
1.65
1.85
0.065
0.073
F
7.4
7.6
0.291
0.299
K0
2.55
2.75
0.100
0.108
P0
3.9
4.1
0.153
0.161
P1
7.9
8.1
0.311
0.319
P2
1.9
2.1
0.075
0.082
R
40
1.574
W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions
are in millimeters
All dimensions are in millimeters
STGD3NB60KD
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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