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1/8
May 2001
STN1HNC60
N-CHANNEL 600V - 7
- 0.4A - SOT-223
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 7
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
AC ADAPTORS AND BATTERY CHARGERS
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STN1HNC60
600 V
< 8
0.4 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
0.4
A
I
D
Drain Current (continuos) at T
C
= 100C
0.25
A
I
DM
(1)
Drain Current (pulsed)
1.6
A
P
TOT
Total Dissipation at T
C
= 25C
2.5
W
Derating Factor
0.02
W/C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
0.4A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
1
2
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
STN1HNC60
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-pcb
Rthj-amb
T
l
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
60
300
C/W
C/W
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
0.4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
100
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
=0.7 A
7
8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.7A
1.25
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
160
pF
C
oss
Output Capacitance
26
pF
C
rss
Reverse Transfer
Capacitance
3.8
pF
3/8
STN1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300V, I
D
= 0.7A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
8
8
ns
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 1.4A,
V
GS
= 10V
8.5
11.5
nC
Q
gs
Gate-Source Charge
2.8
nC
Q
gd
Gate-Drain Charge
2.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, I
D
= 1.4A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
25
ns
t
f
Fall Time
9
ns
t
c
Cross-over Time
34
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
0.4
A
I
SDM
(2)
Source-drain Current (pulsed)
1.6
A
V
SD
(1)
Forward On Voltage
I
SD
= 0.4 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 1.4A, di/dt = 100A/s,
V
DD
= 100V, Tj = 150C
(see test circuit, Figure 5)
500
ns
Q
rr
Reverse Recovery Charge
950
nC
I
RRM
Reverse Recovery Current
3.8
A
Thermal Impedance
Safe Operating Area
STN1HNC60
4/8
Transconductance
Static Drain-source On Resistance
Output Characteristics
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STN1HNC60
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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