1/10
January 2002
STP11NC40, STP11NC40FP
N-CHANNEL 400V - 0.44
- 9.5A TO-220/TO-220FP
PowerMESHTMII Power MOSFET
s
TYPICAL R
DS
(on) = 0.44
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP11NC40
STP11NC40FP
400 V
400 V
< 0.55
< 0.55
9.5 A
9.5 A(*)
120 W
30 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP11NC40
P11NC40
TO-220
TUBE
STP11NC40FP
P11NC40FP
TO-220FP
TUBE
TO-220
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STP11NC40, STP11NC40FP
2/10
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
9.5A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
STP11NC40
STP11NC40FP
V
DS
Drain-source Voltage (V
GS
= 0)
400
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
400
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
9.5
9.5 (*)
A
I
D
Drain Current (continuos) at T
C
= 100C
6
6 (*)
A
I
DM
(
l
)
Drain Current (pulsed)
38
38 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
120
30
W
Derating Factor
0.96
0.24
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
3.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
C
C
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.04
4.1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
9.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
400
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 5 A
0.44
0.55
3/10
STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 5 A
8.6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
995
172
25
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 200 V, I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
15
18
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 320V, I
D
= 10 A,
V
GS
= 10V
32.5
6
15
45.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 320 V, I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
43
15
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320V, I
D
= 10 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
7.5
14
23
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
9.5
38
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 9.5 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 9.5 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
315
2100
13.6
ns
nC
A
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220
STP11NC40, STP11NC40FP
4/10
Output Characteristics
Thermal Impedance For TO-220
Static Drain-source On Resistance
Thermal Impedance For TO-220FP
Transfer Characteristics
Transconductance
5/10
STP11NC40, STP11NC40FP
Normalized
Gate
Threshold
Voltage
vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized BVDSS vs Temperature
STP11NC40, STP11NC40FP
6/10
Maximum Avalanche Energy vs Temperature
Id vs Temperature
7/10
STP11NC40, STP11NC40FP
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
STP11NC40, STP11NC40FP
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/10
STP11NC40, STP11NC40FP
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STP11NC40, STP11NC40FP
10/10
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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