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STPS3L60-C2
July 2003 - Ed: 2A
POWER SCHOTTKY RECTIFIER
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD, this
device is intended for use in low voltage, high
frequency inverters and small battery chargers.
For
applications
where
there
are
space
constraints, e.g Telecom battery charger, this
product is also offered in DO-15 (STPS3L60Q).
DESCRIPTION
s
NEGLIGIBLE SWITCHING LOSSES
s
LOW THERMAL RESISTANCE
s
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
60
V
I
F(RMS)
RMS forward current
10
A
I
F(AV)
Average forward current
T
L
= 105C
= 0.5
3
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
100
A
P
ARM
Repetitive peak avalanche power
tp = 1s
Tj = 25C
2000
W
T
stg
Storage temperature range
- 65 to + 150
C
Tj
Maximum operating junction temperature *
150
C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3 A
V
RRM
60 V
Tj (max)
150C
V
F
(max)
0.61 V
MAIN PRODUCT CHARACTERISTICS
DO-201AD
STPS3L60-C2
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
STPS3L60-C2
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25C
V
R
= V
RRM
150
A
Tj = 100C
15
mA
V
F
*
Forward voltage drop
Tj = 25C
I
F
= 3 A
0.62
V
Tj = 100C
I
F
= 3 A
0.61
Pulse test : * tp = 380 s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.44 x I
F(AV)
+ 0.05 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th(j-a)
Junction to ambient
Lead length = 10 mm
80
C/W
R
th(j-l)
Junction to leads
Lead length = 10 mm
20
C/W
THERMAL RESISTANCES
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tamb(C)
IF(av)(A)
Rth(j-a)=80C/W
Rth(j-a)=Rth(j-l)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
= 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (C)
j
P
(t )
P
(25C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P
(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS3L60-C2
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1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
12
t(s)
IM(A)
Ta=25C
Ta=50C
Ta=100C
I
M
t
=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-1
1E+0
1E+1
1E+2
1E+3
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
0
5
10 15 20 25 30 35 40 45 50 55 60
1E-3
1E-2
1E-1
1E+0
1E+1
5E+1
VR(V)
IR(mA)
Tj=25C
Tj=125C
Tj=100C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1
10
100
10
20
50
100
200
500
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1
10
0.0
0.5
1.0
1.5
2.0
2.5
VFM(V)
Tj=25C
Tj=100C
(Maximum values)
Tj=100C
(Maximum values)
30
IFM(A)
Tj=100C
(Typical values)
Fig. 9-1: Forward voltage drop versus forward
current (high level, maximum values).
0
1
2
3
4
5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VFM(V)
Tj=25C
Tj=100C
(Typical values)
Tj=100C
(Maximum values)
Tj=100C
(Maximum values)
IFM(A)
Fig. 9-2: Forward voltage drop versus forward
current (low level, maximum values).
STPS3L60-C2
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
DO-201AD plastic
J
A
I
D
55.9
50.8
H
G = D + 0.2 to 0.4 mm
E
E
R0.5
R0.5
B
MIN
MAX
K
F
(G = hole in the PCB)
C
10 max
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
9.5
0.374
B
13.75
17.75 0.541
0.699
C
5.3
0.208
D
1.3
0.051
E
3.53
0.139
F
2.4
3.15
3.9
0.094 0.124 0.153
G
1.6
0.063
H
14.9
15.6 0.587
0.614
I
0.5
0.6
0.7
0.019 0.024 0.027
J
18.78
0.739
K
3.8
4.8
0.150
0.189
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS3L60-C2
STPS3L60
DO-201AD
1.12g
500
Ammopack
s
WHITE BAND INDICATES CATHODE
s
EPOXY MEETS UL94,V0
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