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PRELIMINARY DATA
September 2002
STT1NF100
N-CHANNEL 100V - 0.7
- 1A SOT23-6L
STripFETTM II POWER MOSFET
(1) I
SD
1A, di/dt
350A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
s
TYPICAL R
DS(on)
= 0.7
s
EXCEPTIONAL dv/dt CAPABILITY
s
VERY LOW Qg
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique "Single Feature Size
TM"
strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
DC MOTOR CONTROL (DISK DRIVES, etc.)
s
SYNCHRONOUS RECTIFICATION
MARKING
s
STQ0
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STT1NF100
100V
<0.8
1A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
1
A
I
D
Drain Current (continuous) at T
C
= 100C
0.6
A
I
DM
( )
Drain Current (pulsed)
4
A
P
TOT
Total Dissipation at T
C
= 25C
1.6
W
Derating Factor
0.013
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
20
V/ns
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
STT1NF100
2/6
THERMAL DATA
(*) When mounted on FR-4 board of 1inch pad, 0.5oz Cu
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb(*)
Thermal Resistance Junction-ambient Max
78
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
260
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 0.5 A
0.7
0.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=15V
,
I
D
=1A
1
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
105
pF
C
oss
Output Capacitance
20
pF
C
rss
Reverse Transfer
Capacitance
9
pF
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STT1NF100
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 50V, I
D
= 0.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 1)
4
ns
t
r
Rise Time
5.5
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 50V, I
D
= 1A,
V
GS
= 10V
(see test circuit, Figure 2)
4
1
1.5
6
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50V, I
D
= 0.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 1)
13
6.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
1
A
I
SDM
(2)
Source-drain Current (pulsed)
4
A
V
SD
(1)
Forward On Voltage
I
SD
= 1A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 1A, di/dt = 100A/s,
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 3)
45
60
2.7
ns
nC
A
STT1NF100
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Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuit For
Resistive Load
5/6
STT1NF100
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
0.035
0.057
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.25
0.50
0.010
0.020
C
0.09
0.20
0.004
0.008
D
2.80
3.10
0.110
0.122
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.35
0.55
0.014
0.022
e
0.95
0.037
e1
1.90
0.075
A A2
A1
b
e
e1
c
E
L
D
E1
TSOP-6 MECHANICAL DATA
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