ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November 1999 - Ed: 4B
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE : ISOTOP
TM
Electrical insulation : 2500V
RMS
Capacitance : < 45pF.
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
operations.
They are particularly suitable in Motor Control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
I
F(AV)
25A
V
RRM
1200V
t
rr
(typ)
60ns
V
F
(max)
1.9V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
50
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
300
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
210
A
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
STTA2512P
STTA5012TV1/2
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
ISOTOP
TM
K2
A2
K1
A1
STTA5012TV1
K2
K1
A1
A2
STTA5012TV2
K
K
A
SOD93
STTA2512P
1/9
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25C
I
F
= 0.5 A I
R
= 1A Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
60
110
ns
I
RM
Maximum reverse
recovery current
Tj = 125C VR = 600V I
F
=25A
dI
F
/dt = -200 A/
s
dI
F
/dt = -500 A/
s
45
35
A
S factor
Softness factor
Tj = 125C V
R
= 600V I
F
=25A
dI
F
/dt = -500 A/
s
1.2
/
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery time
Tj = 25C
I
F
=25 A, dI
F
/dt = 200 A/
s
measured at 1.1
V
F
max
900
ns
V
Fp
Peak forward voltage
Tj = 25C
I
F
=25A, dI
F
/dt = 200 A/
s
I
F
=40A, dI
F
/dt = 500 A/
s
35
30
V
TURN-ON SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F
*
Forward voltage drop
I
F
=25A
Tj = 25C
Tj = 125C
1.3
2.1
1.9
V
V
I
R
**
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25C
Tj = 125C
2.0
150
8
A
mA
V
to
Threshold voltage
Ip < 3.I
F(AV)
Tj = 125C
1.52
V
R
d
Dynamic resistance
15
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms ,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ Rd x I
F
2
(RMS)
Symbol
Parameter
Conditions
Value
Unit
R
th(j-c)
Junction to case thermal
resistance
ISOTOP
Per diode
1.4
C/W
ISOTOP
Total
0.75
SOD93
1.2
R
th(c)
Coupling thermal resistance
ISOTOP
Coupling
0.1
C/W
P
1
Conduction power dissipation
I
F(AV)
= 25A
=0.5
ISOTOP
Tc= 70C
57
W
SOD93
Tc= 82C
P
max
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
ISOTOP
Tc= 62C
62.5
W
SOD93
Tc= 75C
THERMAL AND POWER DATA (per diode)
STTA2512P / STTA5012TV1/2
2/9
0
5
10
15
20
25
30
0
10
20
30
40
50
60
IF(av) (A)
P1(W)
= 1
= 0.5
= 0.2
= 0.1
T
=tp/T
tp
Fig. 1: Conduction losses versus average current
(per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
300
VFM(V)
IFM(A)
Tj=125C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.2
= 0.5
Single pulse
= 0.1
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
= 0.1
= 0.2
= 0.5
Single pulse
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
trr(ns)
VR=600V
Tj=125C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
35
40
45
50
55
IRM(A)
VR=600V
Tj=125C
IF=2*IF(av)
IF=0.5*IF(av)
IF=IF(av)
dIF/dt(A/s)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
STTA2512P / STTA5012TV1/2
3/9
0
100
200
300
400
500
0.80
1.00
1.20
1.40
1.60
S factor
IF<2*IF(av)
VR=600V
Tj=125C
dIF/dt(A/s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values, per diode).
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125C).
0
100
200
300
400
500
0
10
20
30
40
50
60
VFP(V)
Tj=125C
IF=IF(av)
dIF/dt(A/s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence, per diode).
0
100
200
300
400
500
200
400
600
800
1000
1200
1400
tfr(ns)
Tj=125C
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence, per diode).
STTA2512P / STTA5012TV1/2
4/9
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
tp
T
F = 1/T
= tp/T
VR
STTA2512P / STTA5012TV1/2
5/9
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