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STTH1506TPI
May 2002 - Ed: 1A
Tandem 600V Hyperfast Rectifer
The
TURBOSWITCH
"H"
is
an
ultra
high
performance diode composed of two 300V dice in
series. TURBOSWITCH "H" family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
DESCRIPTION
s
Especially suited as boost diode in continuous
mode
power
factor
correctors
and
hard
switching conditions.
s
Designed for high di/dt operation. Hyperfast
recovery current to compete with GaAs devices.
Allows downsizing of mosfet and heatsinks.
s
Internal ceramic insulated devices with equal
thermal conditions for both 300V diodes.
s
Insulation (2500V RMS) allows placement on
same
heatsink
as
mosfet
and
flexible
heatsinking on common or separate heatsink.
s
Matched diodes for typical PFC application
without need for voltage balance network.
s
C = 7pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
26
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
130
A
T
stg
Storage temperature range
-65 +150
C
Tj
Maximum operating junction temperature
+ 150
C
ABSOLUTE RATINGS (limiting values for both diodes in series)
I
F(AV)
15 A
V
RRM
600 V (in series)
Tj (max)
150 C
V
F
(max)
2.6 V
I
RM
(typ.)
4.8 A
MAJOR PRODUCTS CHARACTERISTICS
1
2
3
TOP3I
(insulated)
TM: TURBOSWITCH is a trademark of STMicroelectronics
1
2
3
STTH1506TPI
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Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage cur-
rent
V
R
= V
RRM
Tj = 25C
20
A
Tj = 125C
30
200
V
F
**
Forward voltage drop
I
F
= 15 A
Tj = 25
C
3.6
V
Tj = 125C
2.1
2.6
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.8 x I
F(AV)
+ 0.053 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Test conditions
Value
Unit
R
th (j-c)
Junction to case
Per diode
2.9
C/W
R
th (c)
Coupling
0.3
R
th (j-c)
Junction to case
Total
1.6
P
1
Conduction power dissipation for
both diodes
I
F(AV)
= 15 A
= 0.5
Tc = 70C
50
W
THERMAL AND POWER DATA
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
I
F
= 0.5 A Irr = 0.25A
I
R
= 1 A
Tj = 25C
16
ns
I
F
= 1 A dI
F
/dt = - 50A/
s
V
R
= 30 V
35
I
RM
Reverse recovery
current
V
R
= 400 V I
F
= 15 A
dI
F
/dt = -200 A/
s
Tj = 125C
4.8
6.0
A
S
factor
0.4
-
RECOVERY CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
tfr
Forward
recovery time
I
F
= 15 A dI
F
/dt = 100A/
s,
V
FR
= 1.1 x V
F
max
Tj = 25C
200
ns
V
FP
Forward
recovery voltage
I
F
= 15 A dI
F
/dt = 100 A/
s
Tj = 25C
6
V
TURN-ON SWITCHING CHARACTERISTICS
STTH1506TPI
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0
5
10
15
20
25
30
35
40
45
50
55
0
2
4
6
8
10
12
14
16
18
20
IF(AV)(A)
P(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Conduction losses versus average current.
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0
1
2
3
4
5
6
7
8
T
j
=125C
(Maximum values)
T =125C
(Maximum values)
j
T =125C
(Typical values)
j
T =25C
(Maximum values)
j
VFM(V)
IFM(A)
Fig. 2: Forward voltage drop versus forward
current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
2
4
6
8
10
12
14
16
18
20
22
0
200
400
600
800
1000
I =0.25 x I
F
F(AV)
dIF/dt(A/s)
IRM(A)
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =0.5 x I
F
F(AV)
I =I
F
F(AV)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
10
20
30
40
50
60
70
80
90
100
0
200
400
600
800
1000
dIF/dt(A/s)
trr(ns)
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =0.5 x I
F
F(AV)
I =I
F
F(AV)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence).
0
50
100
150
200
250
300
350
0
200
400
600
800
1000
dIF/dt(A/s)
Qrr(nC)
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
I =0.5 x I
F
F(AV)
I =I
F
F(AV)
Fig. 6: Reverse recovery charges versus dI
F/
dt
(90% confidence).
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0.20
0.30
0.40
0.50
0.60
0.70
0.80
0
200
400
600
800
1000
dIF/dt(A/s)
S factor
I =I
V =400V
T =125C
F
F(AV)
R
j
Fig. 7: Softness factor versus dI
F
/dt (typical
values).
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
25
50
75
100
125
Tj(C)
I
RM
S factor
I =I
V =400V
Reference: T =125C
F
F(AV)
R
j
Fig. 8: Relative variations of dynamic parameters
versus junction temperature.
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
VFP(V)
dIF/dt(A/s)
I =I
T =125C
F
F(AV)
j
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0
50
100
150
200
250
300
350
400
0
100
200
300
400
500
tfr(ns)
dIF/dt(A/s)
I =I
V =1.1 x V max.
T =125C
F
F(AV)
FR
F
j
Fig. 10: Forward recovery time versus dI
F
/dt (90%
confidence).
10
100
1000
1
10
100
1000
VR(V)
C(pF)
F=1MHz
V
=30mV
T =25C
OSC
j
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
STTH1506TPI
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Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH1506TPI
STTH1506TPI
TOP3I
4.46 g.
30
Tube
s
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
TOP3I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.4
4.6
0.173
0.181
B
1.45
1.55 0.057
0.061
C
14.35
15.60 0.565
0.614
D
0.5
0.7
0.020
0.028
E
2.7
2.9
0.106
0.114
F
15.8
16.5 0.622
0.650
G
20.4
21.1 0.815
0.831
H
15.1
15.5 0.594
0.610
J
5.4
5.65 0.213
0.222
K
3.4
3.65 0.134
0.144
L
4.08
4.17 0.161
0.164
P
1.20
1.40 0.047
0.055
R
4.60
0.181
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