T2535-600G
May 1998 - Ed: 1E
HIGH PERFORMANCE TRIAC
Symbol
Parameter
Value
Unit
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125
C
600
V
I
T(RMS)
RMS on-state current
(360
conduction angle)
Tc= 95
C
25
A
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25
C)
tp = 8.3ms
262
A
tp = 10 ms
250
I
2
t
I
2
t Value (half-cycle, 50 Hz)
tp = 10 ms
312.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 500 mA
dI
G
/dt = 1 A/
s.
Repetitive
F = 50 Hz
20
A/
s
Non Repetitive
100
T
stg
T
j
Storage temperature range
Operating junction temperature range
- 40, + 150
- 40, + 125
C
Tl
Maximum temperature for soldering during 10s
260
C
ABSOLUTE RATINGS (limiting values)
D
2
PAK
HIGH COMMUTATION (dI/dt)c > 13 A/ms
without snubber
HIGH STATIC dV/dt > 500 V/
s
FEATURES
The T2535-600G triac uses a high performance
SNUBBERLESS
TM
technology.
The
part is intended for
general purpose
applications using surface mount technology.
DESCRIPTION
A1
A2
G
A2
1/5
P
G (AV)
= 1 W
P
GM
= 10 W (tp = 20
s)
I
GM
= 4 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambiant (S=1cm
2
)
45
C/W
Rth(j-c)
Junction to case for DC
1.4
C/W
Rth(j-c)
Junction to case for AC 360
conduction angle (F=50Hz)
1.0
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
I-II-III
MIN
2
mA
MAX
35
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
C
I-II-III
MAX
1.3
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
C
I-II-III
MIN
0.2
V
I
H
*
I
T
= 500mA
Gate open
Tj= 25
C
MAX
50
mA
I
L
I
G
= 1.2 I
GT
Tj = 25
C
I-II-III
MAX
80
mA
V
TM *
I
TM
= 35A tp= 380
s
Tj= 25
C
MAX
1.5
V
I
DRM
V
D
= V
DRM
Tj= 25
C
MAX
5
A
I
RRM
V
R
= V
RRM
Tj= 125
C
MAX
3
mA
dV/dt *
Linear slope up to V
D
=67%V
DRM
Gate open
Tj= 125
C
MIN
500
V/
s
(dI/dt)c *
Without snubber
Tj= 125
C
MIN
13
A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1.
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
T 25
35 - 600
G
TRIAC
CURRENT
PACKAGE :
G = D
2
PAK
VOLTAGE
SENSITIVITY
Add "-TR" suffix for Tape & Reel shipment
T2535-600G
2/5
0
5
10
15
20
25
0
5
10
15
20
25
30
35
P(W)
=180
=120
=90
=60
=30
I
(A)
T(RMS)
Fig. 1: Maximum power dissipation versus RMS
on-state current .
0
25
50
75
100
125
0
5
10
15
20
25
30
I
(A)
T(RMS)
=180
Tcase(
C)
Fig. 3: RMS on-state current versus case tem-
perature.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
,I [Tj]/I
,I [Tj=25
C]
GT H
GT H
I
GT
I
H
Tj(
C)
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature (typi-
cal values).
115
105
100
125
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
P(W)
Tcase (
C)
=180
Rth=0
C/W
Rth=1
C/W
Rth=2
C/W
Rth=3
C/W
95
110
120
Tamb(
C)
Fig. 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(T
amb
and T
case
) for different thermal resistances
heatsink+contact.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
1
10
100
1000
0
20
40
60
80
100
120
140
160
180
200
220
I
(A)
TSM
Tj initial=25
C
F=50Hz
Number of cycles
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
T2535-600G
3/5
1
2
5
10
100
200
500
1000
I
(A),I t(A s)
TSM
Tj initial=25
C
I
TSM
I t
tp(ms)
Fig. 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
50
60
70
80
Rth(j-a) (
C/W)
S(Cu) (cm )
Fig. 9: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35
m).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
200
I
(A)
TM
Tj=25
C
Tj max.:
Vto=0.9V
Rt=16 m
Tj=Tj max.
V
(V)
TM
Fig. 8: On-state characteristics (maximum values).
0
40
80
120
160
200
240
280
320
360
T (
C)
250
200
150
100
50
0
Epoxy FR4
board
Metal-backed
board
245
C
215
C
t (s)
Fig. 10: Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T2535-600G
4/5
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
2.0 MIN.
FLAT ZONE
A2
V2
C
A1
G
L
L3
L2
B
B2
E
REF.
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.30
4.60 0.169
0.181
A1
2.49
2.69 0.098
0.106
A2
0.03
0.23 0.001
0.009
B
0.70
0.93 0.027
0.037
B2
1.25
1.40
0.048 0.055
C
0.45
0.60 0.017
0.024
C2
1.21
1.36 0.047
0.054
D
8.95
9.35 0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28 0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40 0.050
0.055
L3
1.40
1.75 0.055
0.069
R
0.40
0.016
V2
0
8
0
8
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use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
1998 STMicroelectronics - Printed in Italy - All rights reserved.
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8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
MARKING : T2535
600G
T2535-600G
5/5
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