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TS1220-600B
May 1998 - Ed: A3
SENSITIVE SCR
Symbol
Parameter
Value
Unit
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125C R
GK
= 220
600
V
I
T(RMS)
RMS on-state current
(180
conduction angle)
Tc= 105
C
12
A
I
T(AV)
Average on-state current
(180
conduction angle)
Tc= 105
C
8
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25C )
tp = 10 ms
110
A
tp = 8.3 ms
115
I
2
t
I
2
t Value for fusing
tp = 10 ms
40
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA dI
G
/dt = 0.1 A/
s.
50
A/
s
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
T
Maximum temperature for soldering during 10s
260
C
ABSOLUTE RATINGS (limiting values)
DPAK
(Plastic)
I
T(RMS)
= 12A
V
DRM
/V
RRM
= 600V
I
GT
< 200
A
HIGH I
TSM
= 110A (tp = 10ms)
FEATURES
The TS1220-600B is using a high performance
TOPGLASS PNPN technology and is intended for
applications requiring high surge capability (like
power tools, crowbar protection, capacitive dis-
charge ignition...).
DESCRIPTION
K
A
G
A
1/5
P
G (AV)
= 0.2W P
GM
= 3 W (tp = 20
s) I
GM
= 1.2 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case for D.C
1.5
C/W
Rth(j-a)
Junction to ambient (S = 0.5 cm
2
)
70
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Type
Value
Unit
I
GT
V
D
=12V R
L
=140
Tj= 25
C
MAX
200
A
V
GT
V
D
=12V R
L
=140
Tj= 25C
MAX
0.8
V
V
GD
V
D
=12V(DC) R
L
=33
Tj= 25C
MAX
0.1
V
V
RG
I
RG
= 10
A
Tj= 25C
MIN
8
V
I
H
I
T
=50mA I
G
=5mA R
GK
= 1k
Tj= 25C
MAX
5
mA
V
TM
I
TM
= 24A tp= 380
s
Tj= 25
C
MAX
1.6
V
I
DRM
VD= V
DRM
R
GK
= 220
Tj= 25C
MAX
10
A
I
RRM
V
R
= V
RRM
R
GK
= 220
Tj= 125C
MAX
2
mA
dV/dt
V
D
=67%V
DRM
R
GK
= 220
Tj= 125
C
MIN
5
V/
s
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
TS 12 20 - 600 B
THYRISTOR
SENSITIVE
CURRENT
SENSITIVITY
VOLTAGE
PACKAGE
B = DPAK
TS1220-600B
2/5
0
1
2
3
4
5
6
7
8
9 10 11 12
0
2
4
6
8
10
12
14
P(W)
I
(A)
T(AV)
180
Fig 1: Maximum average power dissipation versus
average on-state current.
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Tamb(C)
P(W)
Tcase (C)
Rth=0C/W
125
105
110
115
120
Rth(j-a)=37C/W
Rth(j-a)=80C/W
Fig 2: Correlation between maximum average
power dissipation and maximum allowable tem-
peratures (Tamb and Tcase).
Note: Rth=0C/W is infinite heatsink.
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
11
12
13
I
(A)
T(AV)
D.C.
Tcase(C)
Fig 3-1: Average and D.C. on-state current versus
case temperature.
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tamb(C)
I
(A)
T(AV)
Fig 3-2: Average and D.C. on-state current versus
ambient temperature (device mounted on FR4 with
recommended pad layout).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Zth(j-c)/Rth(j-c)]
tp(s)
Fig 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K=[Zth(j-a)/Rth(j-a)]
tp(s)
Fig 4-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (re-
comended pad layout).
TS1220-600B
3/5
-40
-20
0
20
40
60
80
100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
,I [Tj]/I
,I [Tj=25C]
GT H
GT H
I
GT
I
H
Tj(C)
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature.
1E+1
1E+2
1E+3
1E+4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I [R
] / I [R
=1k ]
H
GK
H
GK
Tj=25C
R
( )
GK
Fig 6: Relative variation of holding current versus
gate-cathode resistance (typical values).
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
120
I
A)
TSM(
Tj initial=25C
F=50Hz
Number of cycles
Fig 7: Non repetitive surge peak on-state current
versus number of cycles.
1
2
5
10
10
100
500
I
(A),It(As)
TSM
Tj initial=25C
I
TSM
It
tp(ms)
Fig 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.1
1.0
10.0
100.0
I
(A)
TM
Tj max.:
Vto=0.85V
Rt=31m
Tj=Tj max.
Tj=25C
V
(V)
TM
Fig 9: On-state characteristics (maximum values).
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
Rth(j-a) (C/W)
S(Cu) (cm)
Fig 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
m).
TS1220-600B
4/5
PACKAGE MECHANICAL DATA
DPAK (Plastic)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max
Min.
Typ. Max.
A
2.20
2.40 0.086
0.094
A1
0.90
1.10 0.035
0.043
A2
0.03
0.23 0.001
0.009
B
0.64
0.90 0.025
0.035
B2
5.20
5.40 0.204
0.212
C
0.45
0.60 0.017
0.023
C2
0.48
0.60 0.018
0.023
D
6.00
6.20 0.236
0.244
E
6.40
6.60 0.251
0.259
G
4.40
4.60 0.173
0.181
H
9.35
10.10 0.368
0.397
L2
0.80
0.031
L4
0.60
1.00 0.023
0.039
V2
0
8
0
8
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TYPE
MARKING
TS1220-600B
TS
1220
6
MARKING
FOOT PRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7
3
1.6
1.6
2.3
2.3
TS1220-600B
5/5
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