1/18
October 2004
VN920SP-E
HIGH SIDE DRIVER
Rev. 1
Table 1. General Features
s
CMOS COMPATIBLE INPUT
s
PROPORTIONAL LOAD CURRENT SENSE
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUTDOWN
s
CURRENT LIMITATION
s
PROTECTION AGAINST LOSS OF GROUND
AND LOSS V
CC
s
VERY LOW STAND-BY POWER DISSIPATION
s
REVERSE BATTERY PROTECTION (*)
s
IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VN920SP-E is a monolithic device designed
in STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground. Active V
CC
pin voltage
clamp protects the device against low energy
spikes (see ISO7637 transient compatibility table).
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload. The device integrates an analog
current sense output which delivers a current
proportional to the load current. Device
automatically turns off in case of ground pin
disconnection.
Table 2. Order Codes
Note: (*) See application schematic at page 9.
Type
R
DS(on)
I
OUT
V
CC
VN920SP-E
15m
30 A
36 V
1
10
PowerSO-10TM
Package
Tube
Tape and Reel
PowerSO-10
VN920SP-E
VN920SP
TR-E
VN920SP-E
2/18
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
- 0.3
V
- I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
- 40
A
I
IN
DC Input Current
+/- 10
mA
V
CSENSE
Current Sense Maximum Voltage
-3
+15
V
V
V
ESD
Electrostatic Discharge
(Human Body Model: R=1.5K
; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
4000
2000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=0.25mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150C; I
L
=45A)
362
mJ
P
tot
Power Dissipation T
C
25C
96.1
W
T
j
Junction Operating Temperature
Internally limited
C
T
c
Case Operating Temperature
- 40 to 150
C
T
STG
Storage Temperature
- 55 to 150
C
UNDERVOLTAGE
OVERTEMPERATURE
V
CC
GND
INPUT
OUTPUT
OVERVOLTAGE
CURRENT
LIMITER
LOGIC
DRIVER
Power
CLAMP
V
CC
CLAMP
V
DS
LIMITER
DETECTION
DETECTION
DETECTION
K
I
OUT
CURRENT
SENSE
3/18
VN920SP-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
(1)
When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
m thick).
(2)
When mounted on a standard single-sided FR-4 board with 6 cm
2
of Cu (at least 35
m thick).
Symbol
Parameter
Value
Unit
R
thj-case
Thermal Resistance Junction-case
Max
1.3
C/W
R
thj-amb
Thermal Resistance Junction-ambient
Max
51.3
(1)
37
(2)
C/W
1
2
3
4
5
6
7
8
9
10
11
OUTPUT
OUTPUT
N.C.
OUTPUT
OUTPUT
GROUND
INPUT
C.SENSE
N.C.
N.C.
V
CC
Connection / Pin
Current Sense
N.C.
Output
Input
Floating
X
X
X
To Ground
Through 1K
resistor
X
Through 10K
resistor
I
S
I
GND
V
CC
V
CC
V
SENSE
OUTPUT
I
OUT
CURRENT SENSE
I
SENSE
INPUT
I
IN
V
IN
V
OUT
GND
V
F
VN920SP-E
4/18
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40
C
<T
j
<150
C
unless otherwise specified)
Table 5. Power
Note: 1. V
clamp
and V
OV
are correlated. Typical difference is 5V.
Table 6. Switching (V
CC
=13V)
Table 7. Logic Input
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
Operating Supply Voltage
5.5
13
36
V
V
USD
Undervoltage Shut-down
3
4
5.5
V
V
OV
Overvoltage Shut-down
36
V
R
ON
On State Resistance
I
OUT
=10A; T
j
=25C
I
OUT
=10A
I
OUT
=3A; V
CC
=6V
15
30
50
m
m
m
V
clamp
Clamp Voltage
I
CC
=20mA (See note 1)
41
48
55
V
I
S
Supply Current
Off State; V
CC
=13V; V
IN
=V
OUT
=0V
Off State; V
CC
=13V; T
j
=25C;
V
IN
=V
OUT
=0V
On State; V
CC
=13V; V
IN
=5V; I
OUT
=0;
R
SENSE
=3.9K
10
10
25
20
5
A
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V
0
50
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125C
5
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25C
3
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=1.3
(see figure 2)
50
s
t
d(off)
Turn-off Delay Time
R
L
=1.3
(see figure 2)
50
s
dV
OUT
/
dt
(on)
Turn-on Voltage Slope
R
L
=1.3
(see figure 2)
See
relative
diagram
V/
s
dV
OUT
/
dt
(off)
Turn-off Voltage Slope
R
L
=1.3
(see figure 2)
See
relative
diagram
V/
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
=1.25V
1
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
=3.25V
10
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
=1mA
I
IN
=-1mA
6
6.8
-0.7
8
V
V
5/18
VN920SP-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. V
CC
- Output Diode
Table 9. Protections (see note 2)
Note: 2. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
Table 10. Current Sense (9V
V
CC
16V) (See Fig. 5)
Note: 3. Current sense signal delay after positive input slope
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
Forward on Voltage
-I
OUT
=5.3A; T
j
=150C
0.6
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
C
T
R
Reset Temperature
135
C
T
hyst
Thermal Hysteresis
7
15
C
I
lim
DC Short Circuit Current
V
CC
=13V
5V<V
CC
<36V
30
45
75
75
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=2A; V
IN
=0V; L=6mH
V
CC
-41
V
CC
-48
V
CC
-55
V
V
ON
Output Voltage Drop
Limitation
I
OUT
=1A; T
j
=-40C....+150C
50
mV
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
K
1
I
OUT
/I
SENSE
I
OUT
=1A; V
SENSE
=0.5V;
T
j
= -40C...150C
3300
4400
6000
dK
1
/K
1
Current Sense Ratio Drift
I
OUT
=1A; V
SENSE
=0.5V;
T
j
= -40C...+150C
-10
+10
%
K
2
I
OUT
/I
SENSE
I
OUT
=10A; V
SENSE
=4V; T
j
=-40C
T
j
=25C...150C
4200
4400
4900
4900
6000
5750
dK
2
/K
2
Current Sense Ratio Drift
I
OUT
=10A; V
SENSE
=4V;
T
j
=-40C...+150C
-8
+8
%
K
3
I
OUT
/I
SENSE
I
OUT
=30A; V
SENSE
=4V; T
j
=-40C
T
j
=25C...150C
4200
4400
4900
4900
5500
5250
dK
3
/K
3
Current Sense Ratio Drift
I
OUT
=30A; V
SENSE
=4V;
T
j
=-40C...+150C
-6
+6
%
I
SENSEO
Analog Sense Leakage
Current
V
CC
=6...16V; I
OUT
=0A;V
SENSE
=0V;
T
j
=-40C...+150C
0
10
A
V
SENSE
Max Analog Sense Output
Voltage
V
CC
=5.5V; I
OUT
=5A; R
SENSE
=10K
V
CC
>8V; I
OUT
=10A; R
SENSE
=10K
2
4
V
V
V
SENSEH
Sense Voltage in
Overtemperature
conditions
V
CC
=13V; R
SENSE
=3.9K
5.5
V
R
VSENSEH
Analog sense output
impedance in
overtemperature condition
V
CC
=13V; T
j
>T
TSD
; Output Open
400
t
DSENSE
Current sense delay
response
to 90% I
SENSE
(see note 3)
500
s
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