2SC5376F
2002-01-16
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376F
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
Low Collector Saturation Voltage: V
CE (sat) (1)
= 15 mV (typ.)
@I
C
= 10 mA/I
B
= 0.5 mA
High Collector Current: I
C
= 400 mA (max)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
15 V
Collector-emitter voltage
V
CEO
12 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
400
mA
Base current
I
B
50
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
-55 to 125
C
Marking
Equivalent
Circuit
(top view)
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2HA1A
F A
Type Name
h
FE
Classification
2SC5376F
2002-01-16
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 15 V, I
E
= 0
0.1 mA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
0.1
mA
DC current gain
h
FE
(Note)
V
CE
= 2 V, I
C
= 10 mA
300
1000
V
CE (sat) (1)
I
C
= 10 mA, I
B
= 0.5 mA
15
30
mV
Collector-emitter saturation voltage
V
CE (sat) (2)
I
C
= 200 mA, I
B
= 10 mA
110 250
mV
Base-emitter voltage
V
BE (sat)
I
C
= 200 mA, I
B
= 10 mA
0.87
1.2 V
Transition frequency
f
T
V
CE
= 2 V, I
C
= 10 mA
80
130
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
4.2
pF
Collector-emitter on resistance
R
on
I
B
= 1 mA, V
in
= 1 V
rms
, f
= 1 kHz
0.9
W
Turn-on time
t
on
85 ns
Storage time
t
stg
170 ns
Switching time
Falll time
t
f
40 ns
Note: h
FE
Classification A: 300 to 600, B: 500 to 1000
50
9
60
9
OUTPUT
600
9
300
W
V
CC
= 6 V
V
BB
= -3 V
INPUT
0 V
10
ms
Duty Cycle <= 2%
IB1
= -IB2 = 5 mA
2SC5376F
2002-01-16
3
I
C
V
BE
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(
m
A
)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
Collector-base voltage V
CB
(V)
C
ob
V
CB
C
o
l
l
e
ct
or
out
pu
t
ca
p
a
ci
t
a
nce
C
ob
(p
F)
Collector current I
C
(mA)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector current I
C
(mA)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-e
mi
tte
r s
a
tu
rati
on
vol
t
ag
e
V
CE (sat)
(
m
V
)
50
0.1 3
500
10
1
0.3
30
Common emitter
IC/IB = 20
Ta
= 25C
30
10
0.1
5
3
1
0.5
0.3
100 300
0.0
1
0.8
0.4 1.2
Common emitter
VCE = 2V
Ta
= 100C 25
-25
300
1000
1.6
500
30
100
50
3
10
5
IE = 0 A
f
= 1 MHz
Ta
= 25C
100
0.1 3 100
10
1
0.3
30
50
30
1
10
5
3
0 5
3 4
1 2
0
0.6
0.2
Common emitter
Ta
= 25C
0.8
IB
= 0.5 mA
6
0.4
1.0
5
4
3
2
1
10000
0.1 3
1000
10
1
0.3
30
5000
3000
10
1000
500
300
100
50
30
100 300
Common emitter
VCE = 2 V
Ta
= 100C
25
-25
1000
0.1 3
1000
10
1
0.3 30
Common emitter
IC/IB = 20
500
Ta
= 100C
25
300
1
-25
100
50
30
10
5
3
100 300
2SC5376F
2002-01-16
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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