2SC5810
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.1 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.17 V (max)
High-speed switching: t
f
= 85 ns (typ.)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
100 V
V
CEX
80
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
7 V
DC I
C
1.0
Collector current
Pulse I
CP
2.0
A
Base current
I
B
0.1
A
DC 2.0
Collector power
dissipation
t = 10 s
P
C
(Note)
1.0
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0
100 nA
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
100 nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 10 mA, I
B
= 0
50
V
h
FE
(1)
V
CE
= 2 V, I
C
= 0.1 A
400
1000
DC current gain
h
FE
(2)
V
CE
= 2 V, I
C
= 0.3 A
200
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 300 mA, I
B
= 6 mA
0.17 V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 300 mA, I
B
= 6 mA
1.10 V
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
5
pF
Rise time
t
r
35
Storage time
t
stg
680
Switching time
Fall time
t
f
See Figure 1.
V
CC
30 V, R
L
= 100
I
B1
= -I
B2
= 10 mA
85
ns
Unit: mm
JEDEC
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SC5810
2004-07-07
2
Marking
Figure 1 Switching Time Test Circuit &
Timing Chart
I
B2
I
B1
20
s
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
< 1%
3 C
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC5810
2004-07-07
3
C
o
llect
or c
u
rre
nt
I C
(
A
)
Ba
se-
e
mi
tte
r sa
tu
rati
on v
o
lta
ge
V
BE (s
a
t
) (
V
)
Collector-emitter voltage VCE (V)
I
C
- V
CE
C
o
llect
or c
u
rre
nt
I C
(
A
)
Collector current IC (A)
h
FE
- I
C
DC cur
r
e
n
t gain
h
FE
Collector current IC (A)
V
CE (sat)
- I
C
Col
l
ect
o
r
-
e
m
itte
r s
a
tu
r
a
ti
on
volt
a
ge
V
CE
(
s
a
t
) (
V
)
Collector current IC (A)
V
BE (sat)
- I
C
Base-emitter voltage VBE (V)
I
C
V
BE
0
0.4
0.6
1
0.2
0.8
IB = 1 mA
10
8
6
4
2
15
20
0
1.2
0.8
0.4
0.2
0.6
1
0
Common emitter
Ta
= 25 C
Single nonrepetitive pulse
h
FE
- I
C
100
1000
30
10000
Ta
= 100C
-55
25
0.001
1
0.1
0.01
0.003
0.03
0.3
Common emitter
VCE = 2 V
Single nonrepetitive pulse
0.1
0.3
0.03
1
0.001
1
0.1
0.01
0.003
0.03
0.3
Ta
= 100C
25
-55
0.01
0.003
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Ta
= 100C
-55
25
1
3
0.3
10
0.03
0.001
1
0.1
0.01
0.003
0.03
0.3
0.1
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0
1.2
0.8
0.4
0.2
0.6
1.0
0
0.4
0.6
0.2
0.8
1.0
Common emitter
VCE = 2 V
Single nonrepetitive pulse
2SC5810
2004-07-07
4
r
th
t
w
Collector-emitter voltage VCE (V)
Safe Operating Area
C
o
lle
c
t
or c
u
r
r
ent
I
C
(A)
Pulse width tw (s)
Tra
n
sie
n
t the
r
m
a
l
re
sist
anc
e
r th (j-
a
)
(
C
/
W
)
1000
1
0.001
100
10
0.01 0.1 1 10 100 1000
0.003 0.03 0.3
3
30 300
3
30
300
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
10
0.01
0.1 1 10 100
0.1
1
V
CE
O
ma
x
3
0.3 30
0.03
0.3
3
*: Single nonrepetitive pulse
Ta
= 25C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren't
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2
). These characteristic
curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
DC operation
(Ta
= 25C)
10
s*
100
s*
1 ms*
100 ms*
10 ms*
10 s*
IC max (continuous)
2SC5810
2004-07-07
5
The information contained herein is subject to change without notice.
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responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
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