TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
1
TOSHIBA
InGaAP LED
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
Panel Circuit Indicator
5 mm package
InGaAP technology
All plastic mold type
Transparent lens
Line-up: 3 colors (pure green, green, pure yellow)
High intensity light emission
Excellent low current light output
Stopper lead type is also available
TLPGE23T, TLFGE23T, TLGE23T, TLPYE23T
Applications: traffic signals, safety equipment, etc.
Line-up
Product Name
Color
Material
TLPGE23TP Pure
Green
TLFGE23TP Green
TLGE23TP Green
TLPYE23TP Pure
Yellow
P
InGaA
l
Maximum Ratings
(Ta
=
=
=
=
25C)
Product Name
Forward Current
I
F
(mA)
Reverse Voltage
V
R
(V)
Power Dissipation
P
D
(mW)
Operating
Temperature
T
opr
(C)
Storage
Temperature
T
stg
(C)
TLPGE23TP 50
4
120
TLFGE23TP 50
4
120
TLGE23TP 50
4
120
TLPYE23TP 50
4
120
-40~100
-40~120
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.31 g
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
2
Electrical and Optical Characteristics
(Ta
=
=
=
=
25C)
Typ. Emission Wavelength
Luminous Intensity
I
V
Forward Voltage
V
F
Reverse Current
I
R
Product Name
l
d
l
P
Dl
I
F
Min Typ.
I
F
Typ.
Max I
F
Max
V
R
TLPGE23TP 558
(562)
14 20 850
3000
20 2.1 2.4 20 50 4
TLFGE23TP 565
(568)
15 20
1530
5000
20 2.0 2.4 20 50 4
TLGE23TP 571
(574)
17 20
2720
7000
20 2.0 2.4 20 50 4
TLPYE23TP 580
(583)
14 20
2720
8000
20 2.0 2.4 20 50 4
Unit nm
mA
mcd
mA
V
mA
mA V
Precautions
Please be careful of the following:
Soldering temperature: 260C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
3
TLPGE23TP
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
40
0
120
60
0
40
80
20
20
60
80 100
20
-20
80
5
0.1
3
10
1
0.3
0.5
0 40
60
560
520
640
0.8
0
0.6
1.0
0.2
0.4
540
580 600 620
IF = 20 mA
Ta
= 25C
2.0
1.6
2.3
50
30
10
3
1
1.7 2.1
5
100
1.8 1.9
2.2
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
10
1
100
1000
30
100
10000
3
5
30 50
Ta
= 25C
300
3000
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
4
TLFGE23TP
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
560
520
640
0.8
0
0.6
1.0
0.2
0.4
540
580 600 620
IF = 20 mA
Ta
= 25C
40
0
120
60
0
40
80
20
20
60
80 100
20
-20
80
5
0.1
3
10
1
0.3
0.5
0 40
60
2.0
1.6
2.3
50
30
10
3
1
1.7 2.1
5
100
1.8 1.9
2.2
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
10
1
100
10000
100
30000
3
5
30 50
1000
Ta
= 25C
3000
300
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
5
TLGE23TP
Radiation pattern
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Ta
= 25C
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
40
0
120
60
0
40
80
20
20
60
80 100
560
520
640
0.8
0
0.6
1.0
0.2
0.4
540
580 600 620
IF = 20 mA
Ta
= 25C
20
-20
80
5
0.1
3
10
1
0.3
0.5
0 40
60
2.0
1.6
2.3
50
30
10
3
1
1.7 2.1
5
100
1.8 1.9
2.2
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
10
1
100
10000
100
30000
3
5
30 50
1000
Ta
= 25C
3000
300
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
6
TLPYE23TP
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
2.0
1.6
2.3
50
30
10
3
1
1.7 2.1
5
100
1.8 1.9
2.2
Ta
= 25C
40
0
120
60
0
40
80
20
20
60
80 100
580
540
660
0.8
0
0.6
1.0
0.2
0.4
560
600 620 640
IF = 20 mA
Ta
= 25C
20
-20
80
5
0.1
3
10
1
0.3
0.5
0 40
60
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
10
1
100
10000
100
30000
3
5
30 50
1000
Ta
= 25C
3000
300
TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP
2002-01-18
7
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAC
RESTRICTIONS ON PRODUCT USE
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