TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
1
TOSHIBA
InGaAP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T,
TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
3 mm package
InGaAP technology
All plastic mold type
Transparent lens
Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
High intensity light emission
Excellent low current light output
Applications: message boards, security devices and dashboard
displays
Line-up
Unit: mm
JEDEC
JEITA
TOSHIBA 4-3E1A
Weight: 0.14 g
Product Name
Color
Material
TLRE50T Red
TLRME50T Red
TLSE50T Red
TLOE50T Orange
TLYE50T Yellow
TLPYE50T Pure
Yellow
TLGE50T Green
TLFGE50T Green
TLPGE50T Pure
Green
P
InGaA
l
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
2
Maximum Ratings
(Ta
=
=
=
=
25C)
Product Name
Forward Current
I
F
(mA)
Reverse Voltage
V
R
(V)
Power Dissipation
P
D
(mW)
Operating
Temperature
T
opr
(C)
Storage
Temperature
T
stg
(C)
TLRE50T 50
4 120
TLRME50T 50
4
120
TLSE50T 50
4 120
TLOE50T 50
4 120
TLYE50T 50
4 120
TLPYE50T 50
4
120
TLGE50T 50
4 120
TLFGE50T 50
4
120
TLPGE50T 50
4
120
-40~100
-40~120
Electrical and Optical Characteristics
(Ta
=
=
=
=
25C)
Typ. Emission Wavelength
Luminous Intensity
I
V
Forward Voltage
V
F
Reverse Current
I
R
Product Name
l
d
l
P
Dl
I
F
Min Typ.
I
F
Typ.
Max I
F
Max
V
R
TLRE50T
630
(644)
20 20 850
1800
20 1.9 2.4 20 50 4
TLRME50T 626
(636)
23 20 850
2200
20 1.9 2.4 20 50 4
TLSE50T
613
(623)
20 20
1530
3500
20 1.9 2.4 20 50 4
TLOE50T
605
(612)
20 20
1530
4500
20 2.0 2.4 20 50 4
TLYE50T
587
(590)
17 20
1530
3500
20 2.0 2.4 20 50 4
TLPYE50T 580
(583)
14 20 850
2500
20 2.0 2.4 20 50 4
TLGE50T
571
(574)
17 20 476
1500
20 2.0 2.4 20 50 4
TLFGE50T 565
(568)
15 20 272
1000
20 2.0 2.4 20 50 4
TLPGE50T 558
(562)
14 20 153 600 20 2.1 2.4 20 50 4
Unit nm
mA
mcd
mA
V
mA
mA V
Precautions
Please be careful of the following:
Soldering temperature: 260C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
3
TLRE50T
20
-20 80
0.1
3
1
0.3
0.5
0
40
60
700
0.8
0
0.6
1.0
0.2
0.4
IF = 20 mA
Ta
= 25C
680
660
640
620
600
580
10
1
100
10000
1000
Ta
= 25C
100
10
0
60
0
40
80
20
120
20
40
60
80
100
1.6
50
30
10
3
1
5
100
Ta
= 25C
1.7 1.8 1.9 2.0 2.1 2.2 2.3
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
4
TLRME50T
1.6
50
30
10
3
1
5
100
Ta
= 25C
1.7 1.8 1.9 2.0 2.1 2.2 2.3
700
0.8
0
0.6
1.0
0.2
0.4
IF = 20 mA
Ta
= 25C
680
660
640
620
600
580
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
10
1
100
10000
1000
Ta
= 25C
100
10
0
60
0
40
80
20
120
20
40
60
80
100
20
-20 80
0.1
3
1
0.3
0.5
0
40
60
5
10
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
5
TLSE50T
0
60
0
40
80
20
120
20
40
60
80
100
10
1
100
10000
1000
Ta
= 25C
100
10
1.6
50
30
10
3
1
5
100
Ta
= 25C
1.7 1.8 1.9 2.0 2.1 2.2 2.3
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
Forward voltage V
F
(V)
I
F
V
F
Forward c
u
rrent
I
F
(m
A
)
Forward current I
F
(mA)
I
V
I
F
Lum
i
nous
i
n
t
e
n
s
i
t
y
I
V
(m
c
d
)
Case temperature Tc (C)
I
V
Tc
R
e
la
tiv
e
lu
min
o
u
s
in
te
n
s
it
y
I
V
Wavelength
l (nm)
Relative luminous intensity Wavelength
Ambient temperature Ta (C)
I
F
Ta
A
l
l
o
wabl
e f
o
rward
c
u
rrent
I
F
(
m
A
)
Radiation pattern
Ta
= 25C
30
0
60
90
90
30
60
1.0
0.8
0.6
0.4
0.2
0
80
70
50
40
20
10
70
80
50
40
20
10
680
0.8
0
0.6
1.0
0.2
0.4
IF = 20 mA
Ta
= 25C
660
640
620
600
580
560
20
-20 80
0.1
3
1
0.3
0.5
0
40
60
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