TPC6003
2002-01-15
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 19 m (typ.)
High forward transfer admittance: |Y
fs
| = 7 S (typ.)
Low leakage current: I
DSS
= 10 A (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 kW) V
DGR
30 V
Gate-source voltage
V
GSS
20 V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
P
D
2.2
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
P
D
0.7
W
Single pulse avalanche energy (Note 3)
E
AS
5.8
mJ
Avalanche current
I
AR
3 A
Repetitive avalanche energy (Note 4)
E
AR
0.22 mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2a)
R
th (ch-a)
56.8
C/W
Thermal resistance, channel to ambient
(t
= 5 s)
(Note 2b)
R
th (ch-a)
178.5
C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6 4
1 2 3
5
Marking
(Note 5)
S 2 D
TPC6003
2002-01-15
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10 mA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= -20 V
15
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
1.3
2.5 V
V
GS
= 4.5 V, I
D
= 3 A
25 32
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 3 A
19 24
m
W
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 3 A
3.5 7
S
Input capacitance
C
iss
1250
Reverse transfer capacitance
C
rss
155
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
170
pF
Rise time
t
r
5
Turn-ON time
t
on
11
Fall time
t
f
9
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 ms
63
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
25
Gate-source charge
Q
gs
20
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 24 V, V
GS
= 10 V, I
D
= 6 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
(Note 1)
I
DRP
24 A
Forward voltage (Diode)
V
DSF
I
DR
= 6 A, V
GS
= 0 V
-1.2
V
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V, T
ch
= 25C (initial), L = 0.5 mH, R
G
= 25 W, I
AR
= 3.0 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking
"" locates on the left lower side of parts number marking "S2D" indicates terminal
No.1.
(a)
FR-4
2510 ms*
(b)
FR-4
25.4
25.4 0.8
Unit:
(mm)
R
L
=
5
W
V
DD
~
- 15 V
0 V
V
GS
10 V
4.
7
W
I
D
= 3 A
V
OUT
TPC6003
2002-01-15
3
Fo
rw
ar
d
t
r
a
n
sfe
r
ad
mi
ttanc
e |Y
fs
| (S
)
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I D
(A
)
Drain-source voltage VDS (V)
I
D
V
DS
D
r
ai
n
cu
rre
nt
I D
(A
)
Gate-source voltage VGS (V)
I
D
V
GS
Gate-source voltage VGS (V)
V
DS
V
GS
Dain current ID (A)
|Y
fs
| I
D
Drain current ID (A)
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (
O
N
) (
m
9
)
R
DS (ON)
I
D
10
0
2
4
6
8
0
0.1
0.2
0.3
0.5
0.6
0.4
Common source
Ta
= 25C
Pulse test
1.5 A
3 A
ID = 6 A
1
3
10
30
100
0.1
0.3
1
3
30 100
10
Common source
Ta = 25C
Pulse test
VGS = 10 V
4.5 V
100C
0
2
4
6
8
12
0
2 3 4 5
Ta
= -55C
25C
Common source
VDS = 10 V
Pulse test
1
10
1
3
5
10
30
50
1 3
5
30
50
100
100
10
Common source
VDS = 10 V
Pulse test
100C
25C
Ta
= -55C
3
8
0 0.1 0.2 0.3 0.4 0.5
2.5
VGS = 2.3 V
2.6
3.2
10
0
1
2
3
4
5
Common source
Ta
= 25C
Pulse test
6
2.8
4
2.7
4
0
1
2
3
4
5
Common source
Ta
= 25C
Pulse test
VGS = 2.4 V
2.8
6, 8, 10
0
2
4
6
8
10
3
2.7
2.6
2.5
D
r
ai
n
cu
rre
nt
TPC6003
2002-01-15
4
Ambient temperature Ta (
C)
R
DS (ON)
Ta
D
r
ai
n
-
so
urc
e
on resi
s
t
a
n
ce
R
DS (
O
N
) (
m
9
)
Drain-source voltage VDS (V)
I
DR
V
DS
D
r
ai
n
re
ver
s
e c
u
r
r
e
n
t
I DR
(A
)
Drain-source voltage VDS
Capacitance
V
DS
C
apaci
t
anc
e C
(p
F)
Ambient temperature Ta (
C)
V
th
Ta
Gate
th
res
hol
d vol
t
a
ge
V
th
(V
)
Ambient temperature Ta (
C)
P
D
Ta
Gate
-so
u
r
c
e
v
o
l
t
age
V
GS
(V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
D
r
ai
n
-
so
urc
e
v
o
l
t
a
ge
V
DS
(V
)
0
10
20
30
40
50
Common source
Pulse test
-80
-40 0 40
80
160
120
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A, 3 A
ID = 6 A
ID = 1.5 A, 3 A, 6 A
10
100
1000
10000
0.1 1 10 100
3000
300
30
0.3 3
30
Ciss
Crss
Coss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25C
0
0.5
1.5
2.0
2.5
3.5
-80
-40
0
40
80 160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
120
3.0
1.0
0
0
8
16
10
30
50
0
5
15
25
20
24 32 40
20
40
10
6 V
12 V
VDD = 24 V
VGS
VDD = 24 V
12 V
6 V
Common source
ID = 6 A
Ta
= 25C
Pulse test
0
0
0.5
1
1.5
2
2.5
40 80
120
160
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) t
= 5 s
(2) t
= 5 s
(1) DC
(2) DC
0.1
1
10
0
-0.8
-1.2
-1.6
-2.0
-0.4
3
0.3
100
Common source
Ta
= 25C
Pulse test
30
D
r
ai
n
po
w
e
r
di
ssi
p
a
ti
on
P
D
TPC6003
2002-01-15
5
r
th
- t
w
Safe operating area
Pulse tw (s)
Drain-source voltage VDS (V)
T
r
an
s
i
en
t
D
r
ai
n
cu
rre
nt
I D
(A
)
0.1
0.001 0.01 0.1
10
100
1000
1
0.3
3
30
100
300
1000
Single pulse
Device mounted on a glass-
epoxy board (b) (Note 2b)
1
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
0.01
0.01 0.03 0.1 0.3
1
3
10
100
30
0.03
0.1
0.3
1
3
10
30
100
*: Single nonrepetitive pulse
Ta
= 25C
Curves must be derated
linearly with increase in
temperature
VDSS max
10 ms*
1 ms*
ID max (pulsed)*
0.001
0.003
TPC6003
2002-01-15
6
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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