TPC8012-H
2002-03-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
F-MOSV)
TPC8012-H
Switching Regulator Application
DC-DC Converters
Low drain-source ON resistance: R
DS (ON)
= 0.28 (typ.)
High forward transfer admittance: |Y
fs
| = 1.35 S (typ.)
Low leakage current: I
DSS
= 100 A (max) (V
DS
= 200 V)
Enhancement mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Drain-source voltage
V
DSS
200 V
Drain-gate voltage (R
GS
= 20 kW)
V
DGR
200 V
Gate-source voltage
V
GSS
30 V
DC (Note
1)
I
D
1.8
Drain current
Pulse (Note
1)
I
DP
7.2
A
Drain power dissipation
(t
= 10 s)
(Note
2a)
P
D
1.9
W
Drain power dissipation
(t
= 10 s)
(Note
2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
2.05
mJ
Avalanche current
I
AR
1.8
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: (Note 1), (Note 2), (Note 3), (Note 4) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC TO-92
JEITA
TOSHIBA 2-6J1B
Weight: 0.80 g (typ.)
Circuit Configuration
8 6
1 2 3
7
5
4
TPC8012-H
2002-03-04
2
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
R
th (ch-a)
65.8
C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
R
th (ch-a)
125
C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 50 V, T
ch
= 25C (initial), L = 1.0 mH, R
G
= 25 W, I
AR
= 1.8 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
TYPE
TPC8012
H
(a)
FR-4
25.4
25.4 0.8
(Unit:
mm)
(b)
FR-4
25.4
25.4 0.8
(Unit:
mm)
TPC8012-H
2002-03-04
3
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= 25 V, V
DS
= 0 V
10
mA
Drain cut-OFF current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
100
mA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
200
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
3.0
5.0 V
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 0.9 A
0.28 0.40
W
Forward transfer admittance
|Y
fs
| V
DS
= 10 V, I
D
= 0.9 A
0.65 1.35
S
Input capacitance
C
iss
440
Reverse transfer capacitance
C
rss
80
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
260
pF
Rise time
t
r
23
Turn-ON time
t
on
28
Fall time
t
f
22
Switching time
Turn-OFF time
t
off
Duty <= 1%, t
w
= 10 ms
73
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
11
Gate-source charge 1
Q
gs1
6
Gate-drain ("miller") charge
Q
gd
V
DD
~
- 160 V, V
GS
= 10 V,
I
D
= 1.8 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
7.2 A
Forward voltage (diode)
V
DSF
I
DR
= 1.8 A, V
GS
= 0 V
-1.5
V
R
L
=
111
W
V
DD
~
- 100 V
0 V
V
GS
10 V
50
W
I
D
= 0.9 A
V
OUT
TPC8012-H
2002-03-04
4
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
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The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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