TPCF8B01
2003-04-08
1
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS
III
) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: R
DS (ON)
= 72 m (typ.)
High forward transfer admittance: |Y
fs
| = 4.7 S (typ.)
Low leakage current: I
DSS
=
-
10 A (max) (V
DS
=
-
20 V)
Enhancement-model: V
th
=
-
0.5 to
-
1.2 V(V
DS
=
-
10 V, I
D
=
-
200 A)
Low forward voltage: V
FM
= 0.46V(typ.)
Maximum Ratings
MOSFET (Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
-
20
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
-
20
V
Gate-source voltage
V
GSS
8
V
DC
(Note 1)
I
D
-
2.7
Drain current
Pulse
(Note 1)
I
DP
-
10.8
A
Single pulse avalanche energy
(Note 4)
E
AS
1.2
mJ
Avalanche current
I
AR
-
1.35
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.11
mJ
SBD (Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
20
V
Average forward current (Note 2a, 6)
I
F(AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
7(50Hz)
A
Maximum Ratings for MOSFET and SBD (Ta
=
25C)
Characteristics
Symbol
Rating
Unit
Single-device operation
(Note 3a)
P
D (1)
1.35
Drain power
dissipation
(t
=
5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
P
D (2)
1.12
Single-device operation
(Note 3a)
P
D (1)
0.53
Drain power
dissipation
(t
=
5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
P
D (2)
0.33
W
Channel temperature
T
ch
150
C
Storage temperature range
T
stg
-
55~150
C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 7)
8
1
5
4
F8A
1. Anode 5. Drain
2. Anode 6. Drain
3.Source 7. Cathode
4. Gate 8. Cathode
1
2
3
4
8
7
6
5
TPCF8B01
2003-04-08
2
Thermal Characteristics for MOSFET and SBD
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
R
th (ch-a) (1)
92.6
Thermal resistance,
channel to ambient
(t
=
5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
111.6
C/W
Single-device operation
(Note 3a)
R
th (ch-a) (1)
235.8
Thermal resistance,
channel to ambient
(t
=
5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
R
th (ch-a) (2)
378.8
C/W
This transistor is an electrostatic sensitive device. Please handle with caution.
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier
products. This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
DD
=
-
16 V, T
ch
=
25C (initial), L
=
0.5 mH, R
G
=
25
, I
AR
=
-
1.35 A
Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.
Note 6: Rectangular waveform (
=180
o
), V
R
=15V.
Note 7: Black round marking "
" locates on the left lower side of parts number marking "F8A" indicates terminal
No. 1.
FR-4
25.4
25.4
0.8
(
: mm)
(b)
FR-4
25.4
25.4
0.8
(
t: mm)
(a)
25.4
25.4
TPCF8B01
2003-04-08
3
Electrical Characteristics
(Ta
=
25C)
MOSFET
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
8 V, V
DS
=
0 V
10
A
Drain cut-off current
I
DSS
V
DS
=
-
20 V, V
GS
=
0 V
-
10
A
V
(BR) DSS
I
D
=
-
10 mA, V
GS
=
0 V
-
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
-
10 mA, V
GS
=
8V
-
12
V
Gate threshold voltage
V
th
V
DS
=
-
10 V, I
D
=
-
200
A
-
0.5
-
1.2
V
R
DS (ON)
V
GS
=
-
1.8 V, I
D
=
-
0.7 A
215
300
R
DS (ON)
V
GS
=
-
2.5 V, I
D
=
-
1.4A
110
160
Drain-source ON resistance
R
DS (ON)
V
GS
=
-
4.5 V, I
D
=
-
1.4 A
72
110
m
Forward transfer admittance
|Y
fs
|
V
DS
=
-
10 V, I
D
=
-1.4
A
2.4
4.7
S
Input capacitance
C
iss
470
Reverse transfer capacitance
C
rss
70
Output capacitance
C
oss
V
DS
=
-
10 V, V
GS
=
0 V, f
=
1 MHz
80
pF
Rise time
t
r
5
Turn-on time
t
on
9
Fall time
t
f
8
Switching time
Turn-off time
t
off
Duty
<
=
1%, t
w
=
10
s
26
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
6
Gate-source charge
Q
gs
4
Gate-drain ("miller") charge
Q
gd
V
DD
- -
16 V, V
GS
=
-
5 V,
I
D
=
-2.7
A
2
nC
MOSFET Source-Drain Ratings and Characteristics
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
-10.8
A
Forward voltage (diode)
V
DSF
I
DR
=
-2.7
A, V
GS
=
0 V
-1.2
V
SBD
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM(1)
I
FM
=
0.7
A
0.43
V
Peak forward voltage
V
FM(2)
I
FM
=
1.0
A
0.46
0.49
V
Repetitive peak reverse current
I
RRM
V
RRM
=
20 V
50
A
Junction capacitance
C
j
V
R
=
10
V, f
=
1 MHz
54
pF
R
L
=
7.14
V
DD
- -
10 V
-
5 V
V
GS
0 V
4.7
I
D
=
-
1.4 A
V
OUT
TPCF8B01
2003-04-08
4
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
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Handbook" etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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000707EAA
RESTRICTIONS ON PRODUCT USE
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