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Электронный компонент: TA2020

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T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
1
TA2020 CS/6.1/04-03
TA2020-020
STEREO 20W (4
) CLASS-TTM DIGITAL AUDIO AMPLIFIER DRIVER
USING DIGITAL POWER PROCESSING (DPPTM) TECHNOLOGY
T e c h n i c a l I n f o r m a t i o n R e v i s i o n 6 . 1 A p r i l 2 0 0 3
G E N E R A L D E S C R I P T I O N
The TA2020-020 is a 20W (4
) continuous average per channel Class-T Digital Audio Power Amplifier IC
using Tripath's proprietary Digital Power Processing (DPP
TM
) technology. Class-T amplifiers offer both the
audio fidelity of Class-AB and the power efficiency of Class-D amplifiers.
A P P L I C A T I O N S
DVD Players
Mini/Micro Component Systems
Computer / PC Multimedia
Cable Set-Top Products
Televisions
Battery Powered Systems
B E N E F I T S
Fully integrated solution with internal FETs
Easier to design-in than Class-D
Reduced system cost with minimal heat sink
requirement
Dramatically improves efficiency versus Class-AB
amplifiers
Signal fidelity equal to high quality linear
amplifiers
High dynamic range compatible with digital media
such as CD and DVD, and internet audio
F E A T U R E S
Class-T architecture
Single Supply Operation
"Audiophile" Quality Sound
0.03% THD+N @ 10W 4
0.1% THD+N @12W 4
0.18% IHF-IM @ 1W 4
High Power
25W @ 4
, 10% THD+N, V
DD
=14.6V
22W @ 4
, 10% THD+N, V
DD
=13.5V
13W @ 8
, 10% THD+N, V
DD
=13.5V
High Efficiency
88% @ 12W 8
81% @ 20W 4
Dynamic Range = 99dB
Mute and Sleep inputs
Turn-on & turn-off pop suppression
Over-current protection
Over-temperature protection
Bridged outputs
32-pin SSIP package
T Y P I C A L P E R F O R M A N C E
THD+N (%)
Output Power (W)
THD+N versus Output Power
VDD = 13.5V
Av = 12V/V
f = 1kHz
BW = 22Hz - 22kHz
1
2
3
4
5 6 7 8 9 10
20
500m
R
L
= 8
R
L
= 4
1
2
5
0.02
0.01
0.05
0.1
0.2
0.5
10


T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TA2020 CS/6.1/04-03



A B S O L U T E M A X I M U M R A T I N G S
(Note 1)
SYMBOL PARAMETER
Value
UNITS
V
DD
Supply Voltage
16
V
V5
Input Section Supply Voltage
6.0
V
SLEEP
SLEEP Input Voltage
-0.3 to 6.0
V
MUTE
MUTE Input Voltage
-0.3 to V5+0.3
V
ESD
HBM
ESD Susceptibility, All pins except 2, 30
Human Body Model (Note2) Pins 2, 30
2000
1000
V
V
ESD
MM
ESD Susceptibility, Machine Model (Note 3)
200
V
T
STORE
Storage Temperature Range
-40
to 150
C
T
A
Operating Free-air Temperature Range
-40 to 85
C
T
J
Junction Temperature
150
C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
See the table below for Operating Conditions.
Note 2: Human body model, 100pF discharged through a 1.5K
resistor.
Note 3: Machine model, 220pF discharged through all pins.
O P E R A T I N G C O N D I T I O N S
(Note 4)
SYMBOL PARAMETER MIN.
TYP.
MAX.
UNITS
V
DD
Supply Voltage
8.5
13.5
14.6
V
V
IH
High-level Input Voltage (MUTE, SLEEP)
3.5
V
V
IL
Low-level Input Voltage (MUTE, SLEEP)
1
V
Note 4: Recommended Operating Conditions indicate conditions for which the device is functional.
See Electrical Characteristics for guaranteed specific performance limits.
T H E R M A L C H A R A C T E R I S T I C S
SYMBOL PARAMETER
VALUE
UNITS
JC
Junction-to-case Thermal Resistance
3.5 C/W
JA
Junction-to-ambient
Thermal
Resistance
15 C/W









T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TA2020 CS/6.1/04-03



E L E C T R I C A L C H A R A C T E R I S T I C S
(Notes 6, 7)
See Test/Application Circuit. Unless otherwise specified, V
DD
= 13.5V, f = 1kHz,
Measurement Bandwidth = 22kHz, R
L
= 4
, T
A
= 25
C.
SYMBOL PARAMETER
CONDITIONS MIN.
TYP.
MAX.
UNITS
P
O
Output Power
(Continuous Average/Channel)
THD+N = 0.1%
R
L
= 4
R
L
= 8
THD+N = 10%
R
L
= 4
R
L
= 8
11
7
18
10
W
W
W
W
P
O
Output Power (V
DD
=14.6V)
(Continuous Average/Channel)
THD+N = 0.1%
R
L
= 4
R
L
= 8
THD+N = 10%
R
L
= 4
R
L
= 8
16.5
9.5
25
14.8
W
W
W
W
I
DD,MUTE
Mute Supply Current
MUTE = V
IH
5.5
7
mA
I
DD, SLEEP
Sleep Supply Current
SLEEP = V
IH
0.25
2
mA
I
q
Quiescent Current
V
IN
= 0 V
64
75
mA
THD + N Total Harmonic Distortion Plus
Noise
P
O
= 10W/Channel
0.03
%
IHF-IM
IHF Intermodulation Distortion
19kHz, 20kHz, 1:1 (IHF)
0.1
0.5
%
SNR
Signal-to-Noise Ratio
A-Weighted, P
OUT
= 20W, R
L
= 4
99 dB
CS
Channel Separation
0dBr = 1W, R
L
= 4, f = 1 kHz
74
80
dB
PSRR
Power Supply Rejection Ratio
Vripple = 100mV
60
80
dB
Power Efficiency
P
OUT
= 12W/Channel, R
L
= 8
88
%
V
OFFSET
Output Offset Voltage
No Load, MUTE = Logic low
50
150
mV
V
OH
High-level output voltage
(FAULT & OVERLOADB)
3.5
V
V
OL
Low-level output voltage
(FAULT & OVERLOADB)
1
V
e
OUT
Output Noise Voltage
A-Weighted, input AC grounded
100
V
Note 6: Minimum and maximum limits are guaranteed but may not be 100% tested.
Note 7: For operation in ambient temperatures greater than 25
C, the device must be derated based on the
maximum junction temperature and the thermal resistance determined by the mounting technique.


T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TA2020 CS/6.1/04-03
P I N D E S C R I P T I O N
T A 2 0 2 0 P I N O U T
Pin
Function
Description
2, 8
V5D, V5A
Digital 5VDC, Analog 5VDC
3, 7,
16
AGND1, AGND2,
AGND3
Analog Ground
4
REF
Internal reference voltage; approximately 1.0VDC
6
OVERLOADB
A logic low output indicates the input signal has overloaded the amplifier.
9, 12
OAOUT1, OAOUT2
Input stage output pins
10, 13
INV1, INV2
Single-ended inputs. Inputs are a "virtual" ground of an inverting opamp with
approximately 2.4VDC bias.
11
MUTE
When set to logic high, both amplifiers are muted and in idle mode. When low
(grounded), both amplifiers are fully operational. If left floating, the device stays in
the mute mode. Ground if not used.
14
BIASCAP
Input stage bias voltage (approximately 2.4VDC).
17
SLEEP
When set to logic high, device goes into low power mode. If not used this pin
should be grounded. Can be pulled-up to V
DD
with a 1M resistor (100K
minimum).
18
FAULT
A logic high output indicates thermal overload, or an output is shorted to ground,
or another output.
19, 28
PGND2, PGND1
Power Ground (high current)
20
DGND
Digital Ground. Should be connected to AGND locally at TA2020-020.
21, 23,
26, 24
OUTP2 & OUTM2;
OUTP1 & OUTM1
Bridged output pairs
22, 25
VDD2, VDD1
Supply pin for high current H-bridges, nominally 13.5VDC.
1, 5, 15
NC
Not connected
27 VDDA
Analog
13.5VDC
29
CPUMP
Charge pump output (nominally 10V above VDDA)
30
5VGEN
Regulated 5VDC source used to supply power to the input section (pins 2 & 8).
31, 32
DCAP2, DCAP1
Charge pump switching pins. DCAP1 (pin 32) is a free running 300kHz square
wave between VDDA and DGND (13.5Vpp nominal). DCAP2 (pin 31) is level
shifted 10 volts above DCAP1 (pin 32) with the same amplitude (13.5Vpp
nominal), frequency, and phase as DCAP1.
5VGEN
NC
FAULT
PGND2
DGND
OUTP2
VDD2
OUTM2
OUTM1
VDD1
OUTP1
NC
VDDA
PGND1
CPUMP
DCAP2
AGND3
BIASCAP
INV2
OAOUT2
MUTE
INV1
OAOUT1
V5A
AGND2
OVERLOADB
REF
AGND1
V5D
DCAP1
30
16
17
18
19
20
21
22
23
24
25
26
27
28
29
1
15
14
13
11
10
12
9
8
7
6
5
4
3
2
32-pin SSIP Package
(Front View)
32
31
SLEEP
NC


T r i p a t h T e c h n o l o g y, I n c . - T e c h n i c a l I n f o r m a t i o n
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TA2020 CS/6.1/04-03
A P P L I C A T I O N / T E S T C I R C U I T
TA2020-020
R
L
4
or *8
MUTE
FAULT
OVERLOAD
B
(+13.5V)
C
I
2.2uF
OAOUT1
OAOUT2
INV1
INV2
OUTP1
OUTM1
OUTP2
OUTM2
VDDA
5VGEN
BIASCAP
DCAP2
DCAP1
C
I
2.2uF
C
A
0.1uF
C
D
0.1uF
CPUMP
9
10
19
30
27
25
22
6
18
26
24
21
23
29
31
32
13
12
11
14
R
F
20K
17
R
Z
10
, 1/2W
C
Z
0.47uF
C
P
1uF
+
+
5V
SLEEP
5V
5V
+12V
0.1uF
REF
R
REF
8.25K
, 1%
4
5
NC
1M
* Use C
o
= 0.22
F and Cz=0.22uF for 8 Ohm loads
VDD1
PGND1
VDD1
PGND1
VDD2
VDD2
PGND2
PGND2
Note: Analog and Digital/Power Grounds must
be connected locally at the TA2020-020
C
S
0.1uF
C
S
0.1uF
To Pin 30
2
3
V5D
7
15
AGND2
V5A
20
C
S
0.1uF
DGND
VDD1
PGND2
28
PGND1
180uF, 16V
VDD2
VDD
+
+
+
Processing
&
Modulation
Processing
&
Modulation
*C
o
0.47uF
L
o
10uH, 3A
8
(Pin 7)
Analog Ground
Digital/Power Ground
(Pin 28)
(Pin 28)
(Pin 19)
(Pin 19)
To Pin 2,8
R
I
20K
(Pin 3)
R
F
20K
R
I
20K
1
NC
NC
AGND3
16
180uF, 16V
C
SW
C
SW
*C
o
0.47uF
L
o
10uH, 3A
R
L
4
or *8
L
o
10uH, 3A
L
o
10uH, 3A
*C
o
0.47uF
*C
o
0.47uF
C
Z
0.47uF
C
SW
0.1uF
C
SW
0.1uF
C
S
0.1uF
D
O
D
O
D
O
D
O
R
Z
10
, 1/2W
(Pin 28)
(Pin 19)
AGND1
VDD2 (pin 22)
VDD1 (pin 25)
D
H
D
H
D
H
D
H
VDD1 (pin 25)
VDD2 (pin 22)
Diodes (D
O
and D
H
) are Motorola MBRS130T3 (the D
H
diodes are required for V
DD
>13.5V)
C
DO
0.1uF
C
DO
0.1uF