Advance Product Information
February 1, 2006
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Wideband 1 W HPA with AGC
TGA2509
Key Features
Frequency Range: 2-22 GHz
30 dBm Nominal Psat (2-16 GHz)
>29 dBm Nominal Psat (2-20 GHz)
>28.5 dBm Output P1dB
17 dB Nominal Gain
> 25 dB AGC Range
0.25 um 3MI pHEMT Technology
Nominal Bias 12 V @ 1.1 A
Chip Dimensions: 2.30 x 3.20 x 0.10 mm
(0.091 x 0.126 x 0.004 in)
Measured Fixtured Data
Bias Conditions: Vd =12 V, Id= 1.1 A
Primary Applications
Wideband Gain Block
Military EW and ECM
Test Equipment
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
0
3
6
9
12
15
18
21
24
27
30
Frequency (GHz)
G
a
in
(d
B
)
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
R
e
tu
rn
L
o
s
s
(d
B
)
Gain
Input
Output
Product Description
The TriQuint TGA2509 is a compact
Wideband High Power Amplifier with
AGC. The HPA operates from 2-22 GHz
and is designed using TriQuint's proven
standard 0.25 um gate pHEMT production
process.
The TGA2509 provides >28.5 dBm of
output power at 1 dB gain compression
with small signal gain of 17 dB. Typical
saturated power is 30 dBm from 2-16
GHz.
The TGA2509 is suitable for a variety of
wideband electronic warfare systems
such as radar warning receivers,
electronic counter measures,decoys,
jammers and phased array systems.
The TGA2509 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
Lead-free and RoHS compliant
20
22
24
26
28
30
32
34
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency (GHz)
Ou
tp
u
t
P
o
we
r (d
Bm)
Psat
P1dB
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
Advance Product Information
February 1, 2006
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
V
+
Positive Supply Voltage
12.5 V
2/
V
g1
Gate 1 Supply Voltage Range
-2V TO 0 V
V
g2
Gate 2 Supply Voltage Range
-2V TO 0 V
V
c
AGC Control Voltage Range
V
c
< +5 V
V
+
V
c
< 14V
I
+
Positive Supply Current
1.4 A
2/
| I
G
|
Gate Supply Current
70 mA
P
IN
Input Continuous Wave Power
30 dBm
2/
P
D
Power Dissipation (without using AGC)
13.2 W
2/, 3/
P
D
Power Dissipation (when Vc < +2V)
10.6 W
2/, 3/
T
CH
Operating Channel Temperature
150
C
4/, 5/
T
M
Mounting Temperature (30 Seconds)
320
C
T
STG
Storage Temperature
-65 to 150
C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
D
.
3/
When operated at this power dissipation with a base plate temperature of 60
C, the median
life is 1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
5/
These ratings apply to each individual FET.
TGA2509
Advance Product Information
February 1, 2006
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25
C, Nominal)
Vd = 12 V, Id = 1.1 A
SYMBOL
PARAMETER
TEST
CONDITION
NOMINAL
UNITS
Gain
Small Signal Gain
f = 2-22 GHz
17
dB
IRL
Input Return Loss
f = 2-22 GHz
12
dB
ORL
Output Return Loss
f = 2-22 GHz
12
dB
Psat
Saturated Power
f = 2-16 GHz
f = 2-20 GHz
30
29
dB
P
1dB
Output Power @
1dB Gain
Compression
f = 2-20 GHz
28.5
dBm
TABLE III
THERMAL INFORMATION*
PARAMETER
TEST CONDITIONS
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
JC
Thermal
Resistance
(channel to backside
of carrier)
Vd = 12 V
I
D
= 1.1 A
Pdiss = 13.2 W
(without using AGC)
150
6.4
1 E+6
JC
Thermal
Resistance
(channel to backside
of carrier)
Vd = 12 V
I
D
= 0.88 A
Pdiss = 10.6 W
(when using AGC)
150
8.3
1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 65
C baseplate temperature. Worst case is at saturated output
power when DC power consumption rises to 15 W with 1 W RF power
delivered to load. Power dissipated is 14 W and the temperature rise in the
channel is 90
C. Baseplate temperature must be reduced to 60
C to
remain below the 150
C maximum channel temperature.
TGA2509
Advance Product Information
February 1, 2006
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Measured Fixtured Data
Bias Conditions: Vd =12 V, Id= 1.1 A
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
0
3
6
9
12
15
18
21
24
27
30
Frequency (GHz)
Ga
in
(d
B)
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
Re
tu
rn
L
o
s
s
(d
B)
Gain
Input
Output
-20
-15
-10
-5
0
5
10
15
20
25
0
5
10
15
20
25
30
35
Frequency (GHz)
G
a
in (dB
)
Vc = +2.5V
Vc = +2V
Vc = +1.5V
Vc = +1.0V
Vc = +0.5V
Vc = 0V
Vc = -0.25V
Vc = -0.5V
Vc = -0.75V
20
22
24
26
28
30
32
34
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency (GHz)
Output P
o
wer
(dB
m
)
Psat
P1dB
TGA2509
Advance Product Information
February 1, 2006
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Characteristics
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
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TGA2509
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