TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 10, 2006
1
25
26
27
28
29
30
31
32
33
34
35
40
41
42
43
44
45
46
47
48
Frequency (GHz)
Powe
r (
d
B
m
)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
40
41
42
43
44
45
46
47
48
Frequency (GHz)
S
-
P
a
ra
m
e
te
r
(d
B
)
2W Q-Band High Power Amplifier TGA4046
Key Features
Typical Frequency Range: 41 - 46 GHz
Typical 33dBm Psat, 32dBm P1dB
17 dB Nominal Gain
16 dB Nominal Return Loss
Bias: 6 V, 2 A
0.15 um 3MI pHEMT Technology
Chip Dimensions 3.45 x 4.39 x 0.10 mm
(0.136 x 0.173 x 0.004 in)
Primary Applications
Sat - Com
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2 A
P1dB
Psat
Product Description
The TriQuint TGA4046 is a compact High Power
Amplifier MMIC for Q-band applications. The part
is designed using TriQuint's 0.15um gate power
pHEMT process.
The TGA4046 nominally provides 33dBm of
Saturated Output Power, and 32dBm Output
Power at 1dB gain compression from 41 - 46GHz.
The MMIC also provides 17dB Gain and 16dB
Return Loss.
The part is ideally suited for markets such as
Satellite Communications both commercial and
military.
The TGA4046 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
IRL
ORL
GAIN
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without
notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 10, 2006
2
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Drain Voltage
6.5 V
2/
Vg
Gate Voltage Range
-2 TO 0 V
Id
Drain Current
3 A
2/ 3/
Ig
Gate Current
112 mA
3/
P
IN
Input Continuous Wave Power
29 dBm
P
D
Power Dissipation
16 W
2/ 4/
T
CH
Operating Channel Temperature
150
0
C
5/ 6/
T
M
Mounting Temperature (30 Seconds)
320
0
C
T
STG
Storage Temperature
-65 to 150
0
C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/
Total current for the entire MMIC.
4/
When operated at this bias condition with a base plate temperature of 70
0
C, the median life is
1E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/
These ratings apply to each individual FET.
TGA4046
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 10, 2006
3
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
TGA4046
PARAMETER
TYPICAL
UNITS
Frequency Range
41 - 46
GHz
Drain Voltage, Vd
6.0
V
Drain Current, Id
2
A
Gate Voltage, Vg
-0.6
V
Small Signal Gain, S21
17
dB
Input Return Loss, S11
18
dB
Output Return Loss, S22
20
dB
Output Power @ 1dB Gain Compression, P1dB
32
dBm
Saturated Power, Psat
33
dBm
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
T
CH
(
O
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
JC
Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 2 A
Pdiss = 12 W
129
4.9
6.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 10, 2006
4
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Frequency (GHz)
R
e
tu
rn
L
o
s
s
(d
B
)
TGA4046
Measured Data
Bias Conditions: Vd = 6 V, Id = 2 A
IRL
ORL
0
2
4
6
8
10
12
14
16
18
20
22
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Frequency (GHz)
Ga
in
(d
B
)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
February 10, 2006
5
10
12
14
16
18
20
22
24
26
28
30
32
34
36
0
2
4
6
8
10
12
14
16
18
20
22
Pin (dBm)
P
o
u
t
(d
Bm
)
&
Ga
in
(d
B)
25
26
27
28
29
30
31
32
33
34
35
40
41
42
43
44
45
46
47
48
Frequency (GHz)
Power
(
d
Bm
)
TGA4046
Measured Data
Bias Conditions: Vd = 6 V, Id = 2 A
Psat
P1dB
@ 45 GHz
Pout
Gain
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