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BPX43
Vishay Telefunken
1 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Silicon NPN Phototransistor
Description
BPX43 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO18 hermeti-
cally sealed metal case with a glass lens.
A superior linearity of photocurrent vs. irradiation
makes it ideal for linear applications. A base terminal
is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed TO18 case
D
Lens window
D
Angle of half sensitivity
=
15
D
Exact central chip alignment
D
Base terminal available
D
Very high photo sensitivity
D
High linearity
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
94 8402
Applications
Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range
light barriers with additional optics, optical switches, alarm systems.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Collector Base Voltage
V
CBO
80
V
Collector Emitter Voltage
V
CEO
70
V
Emitter Base Voltage
V
EBO
7
V
Collector Current
I
C
50
mA
Peak Collector Current
t
p
x
10
m
s
I
CM
200
mA
Total Power Dissipation
T
amb
x
25
C
P
tot
250
mW
Junction Temperature
T
j
125
C
Operating Temperature Range
T
op
55...+125
C
Storage Temperature Range
T
stg
55...+125
C
Soldering Temperature
t
x
5 s, distance from
touching border
y
2 mm
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
400
K/W
Thermal Resistance Junction/Case
R
thJC
150
K/W
BPX43
Vishay Telefunken
2 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown
Voltage
I
C
= 1 mA
V
(BR)CE
O
70
V
Collector Dark Current
V
CE
= 25 V, E = 0
I
CEO
10
200
nA
Collector Emitter Capacitance
V
CE
= 0 V, f = 1 MHz, E = 0
C
CEO
23
pF
Emitter Base Capacitance
V
EB
= 0 V, f = 1 MHz, E = 0
C
EBO
47
pF
Collector Base Capacitance
V
CB
= 0 V, f = 1 MHz, E = 0
C
CBO
41
pF
Collector Light Current
E
e
= 0.5 mW/cm
2
,
l
= 950 nm, V
CE
= 5 V
I
ca
0.8
mA
Temp. Coefficient of I
ca
l
= 950 nm
TK
Ica
1
%/K
Base Light Current
E
e
= 0.5 mW/cm
2
,
l
= 950 nm, V
CB
= 5 V
I
ba
10
m
A
Angle of Half Sensitivity
15
deg
Wavelength of Peak Sensitivity
l
p
920
nm
Range of Spectral Bandwidth
l
0.5
630...1040
nm
Collector Emitter Saturation
Voltage
E
e
= 0.5 mW/cm
2
,
l
= 950 nm, I
C
= 0.1 mA
V
CEsat
0.15
0.3
V
Type Dedicated Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Current Gain
V
CE
= 5 V,
BPX384
B
330
CE
I
C
= 1 mA
BPX385
B
520
BPX386
B
650
Collector Light Current E
e
=0.5 mW/cm
2
,
BPX384
I
ca
0.5
0.7
1.0
mA
g
e
l
=950nm, V
CE
=5V
BPX385
I
ca
0.8
1.25
1.6
mA
BPX386
I
ca
1.25
2
mA
Rise Time/ Fall Time
V
CE
=5V, I
C
=1mA,
BPX384
t
r
, t
f
15
m
s
CE
C
R
L
=1k
W
l
=820nm
BPX385
t
r
, t
f
20
m
s
BPX386
t
r
, t
f
25
m
s
BPX43
Vishay Telefunken
3 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
25
50
75
100
0
200
400
800
150
94 8342
600
125
T
amb
Ambient Temperature (
C )
P
T
otal Power Dissipation ( mW
)
tot
R
thJC
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8343
20
I Collector Dark Current ( nA
)
CEO
T
amb
Ambient Temperature (
C )
10
0
10
1
10
2
10
3
10
4
10
6
10
5
150
50
100
V
CE
=20V
E=0
Figure 2. Collector Dark Current vs.
Ambient Temperature
94 8344
0
50
100
150
T
amb
Ambient Temperature (
C )
0
0.5
1.0
1.5
2.0
3.5
I Relative Collector Current
ca rel
2.5
3.0
V
CE
=5V
E
e
=1mW/cm
2
l=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.01
0.1
1
10
100
I Collector Light Current ( mA
)
ca
E
e
Irradiance ( mW / cm
2
)
10
94 8369
V
CE
=5V
l=950nm
6
5
4
Figure 4. Collector Light Current vs.
Irradiance
0.1
1
10
0.1
1
10
I Collector Light Current ( mA
)
ca
V
CE
Collector Emitter Voltage ( V )
100
94 8370
E
e
=1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
BPX 43-5
l=950nm
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.01
0.1
1
10
0
200
400
600
800
B
Amplification
I
C
Collector Current ( mA )
100
94 8363
V
CE
=5V
6
5
4
Figure 6. Amplification vs. Collector Current
BPX43
Vishay Telefunken
4 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
0.1
1
10
0
10
20
30
40
50
C Collector Base Capacitance ( pF )
CBO
V
CB
Collector Base Voltage ( V )
100
94 8364
f=1MHz
Figure 7. Collector Base Capacitance vs.
Collector Base Voltage
C Emitter Base Capacitance ( pF )
EBO
93 8365
V
EB
Emitter Base Voltage ( V )
0.1
1
10
0
20
40
60
80
f=1MHz
Figure 8. Emitter Base Capacitance vs.
Emitter Base Voltage
0.1
1
10
0
10
20
30
40
50
V
CE
Collector Emitter Voltage ( V )
100
94 8366
C Collector Emitter Capacitance ( pF )
CEO
f=1MHz
Figure 9. Collector Emitter Capacitance vs.
Collector Emitter Voltage
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S ( ) Relative Spectral Sensitivity
rel
l Wavelength ( nm )
94 8367
l
800
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S Relative Sensitivity
rel
0.6
94 8371
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 11. Relative Radiant Sensitivity vs.
Angular Displacement
BPX43
Vishay Telefunken
5 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Dimensions in mm
96 12178
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