Vishay General Semiconductor
ES1A thru ES1D
Document Number 88586
15-Aug-06
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power losses
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 C
Solder Dip 260 C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V to 200 V
I
FSM
30 A
t
rr
15 ns
V
F
0.92 V
T
j
max.
150 C
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
ES1A ES1B ES1C ES1D UNIT
Device marking code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
V
Maximum RMS voltage
V
RMS
35
70
105
140
V
Maximum DC blocking voltage
V
DC
50
100
150
200
V
Maximum average forward rectified current (Fig. 1)
I
F(AV)
1
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150
C
www.vishay.com
2
Document Number 88586
15-Aug-06
Vishay General Semiconductor
ES1A thru ES1D
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage
at I
F
= 0.6 A
(1)
at I
F
= 1.0 A
V
F
0.865
0.920
V
Maximum DC reverse current at rated
DC blocking voltage
T
A
= 25 C
T
A
= 100 C
I
R
5.0
100
A
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A, l
rr
= 0.25 A
t
rr
15
ns
Maximum reverse recovery time
I
F
= 0.6 A, V
R
= 30 V, di/dt = 50 A/s, I
rr
=10 % I
RM
T
j
= 25 C
T
j
= 100 C
t
rr
25
35
ns
Maximum stored charge
I
F
= 0.6 A, V
R
= 30 V, di/dt = 50 A/s, I
rr
=10 % I
RM
T
j
= 25 C
T
j
= 100 C
Q
rr
10
25
nC
Typical junction capacitance
at 4.0 V, 1 MHz
C
J
10
pF
THERMAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
ES1A ES1B ES1C ES1D
UNIT
Typical thermal resistance
(1)
R
JA
R
JL
85
35
C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ES1D-E3/61T
0.064
61T
1800
7" Diameter Plastic Tape & Reel
ES1D-E3/5AT
0.064
5AT
7500
13" Diameter Plastic Tape & Reel
Figure 1. Maximum Forward Current Derating Curve
0
1.2
80
90
100
110
120
130
140
150
0.8
1.0
0.2
0.4
0.6
Resistive or Inductive Load
P.C.B. Mounted on 0.2 x 0.2"
(5.0 x 5.0 mm) Copper Pad Areas
A
v
er
age F
o
r
w
ard Rectified C
u
rrent (A)
Lead Temperature (C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
5.0
10
15
20
25
30
0
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
r
w
ard S
u
rge C
u
rrent (A)
Document Number 88586
15-Aug-06
www.vishay.com
3
ES1A thru ES1D
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
100
10
1
0.1
0.01
Instantaneo
u
s F
o
r
w
ard C
u
rrent (A)
Instantaneous Forward Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
Percent of Rated Peak Reverse Voltage (%)
0
20
40
60
80
100
1000
100
10
1
0.1
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Thermal Impedance
Reverse Voltage (V)
J
u
nction Capacitance (pF)
14
12
10
8
6
4
2
0
0.1
1
10
100
T
j
= 25 C
f = 1.0 MHz
V
sig
= 50 mVp-p
Mounted on 0.2 x 0.2" (5 x 7 mm)
Copper Pad Areas
100
10
1
0.1
1
10
100
t - Pulse Duration (s)
T
r
ansient Ther
mal
Impedance
(C/
W
)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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