GMS05F
Vishay Semiconductors
formerly General Semiconductor
Document Number 88344
www.vishay.com
28-Feb-02
1
New Product
Surface Mount TVS Diode Array
0.037 (0.95)
Ref.
0.074 (1.9)
Ref.
0.094 (2.4)
0.028 (0.7)
0.039
(1.07)
Mounting Pad Layout
Mechanical Characteristics
Case: SOT-23-5L package
Molding Compound Flammability Rating: UL 94V-0
Marking Code: F05
Packaging Codes Options:
E8 10K per 13" reel, 30K/box
E9 3K per 7" reel, 30K/box
Features
Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 1000-4-5 (Lightning) 24A (tp = 8/20
s)
Small package for use in portable electronics
Protects 4 I/O lines Low leakage current
Low operating and clamping voltages
High temperature guaranteed: 250C/10 sec. at terminals
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Pulse Power 8/20
s waveform
Ppk
350
W
Peak Pulse Current 8/20
s waveform
I
PP
24
A
Operating Temperature
T
J
55 to +125
C
Storage Temperature
T
STG
55 to +150
C
Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Reverse Stand-Off Voltage
V
RWM
5
V
Reverse Breakdown Voltage at I
t
= 1mA
V
BR
6
V
Reverse Leakage Current at V
RWM
= 5V
I
R
20
A
Clamping Voltage at I
PP
= 5A, 8/20
s waveform
V
C
9.8
V
at I
PP
= 24A, 8/20
s waveform
14.5
Peak Forward Voltage at I
F
= 1A, 8/20
s waveform
V
F
1.5
V
Junction Capacitance between I/O pins and Gnd
C
j
325
400
pF
V
R
= 0V, f = 1MH
Z
1
2
5
3
4
Pin Configuration
SOT-23-5L (Top View)
SOT-23-5L
0.120 (3.05)
0.110 (2.80)
0.070 (1.75)
0.059 (1.50)
0.118 (3.00)
0.102 (2.60)
0.020 (0.50)
0.014 (0.35)
0.006 (0.150)
0.0004 (0.010)
0.083 (2.1)
0.067 (1.7)
0.008 (0.20)
0.0035 (0.090)
10
Typical
0.051 (1.30)
0.036 (0.90)
0.040 (1.05)
0.033 (0.85)
Top View
V
IN
SHDN
SW
GND
NFB
Dimensions in inches
and (millimeters)
GMS05F
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88344
2
28-Feb-02
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
P
eak Pulse P
o
w
er (P
PP
) or Current (I
PP
)
Der
ating in P
ercentage
, %
T
A
-- Ambient Temperature (
C)
Fig. 2 Pulse Derating Curve
P
PPM
--
P
eak Pulse P
o
w
er (kW)
Fig. 1 Non-Repetitive Peak Pulse Power
vs. Pulse Time
0.1
1
10
0.1
1.0
10
td -- Pulse Duration (
s)
100
1000
0
50
100
90
80
70
60
40
30
20
10
110
I
PPM
--
P
eak Pulse Current, % I
RSM
Fig. 3 Pulse Waveform
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
0
10
5
15
20
30
25
t -- Time (
s)
I
PP
--
Peak Pulse Current (A)
Fig. 4 Clamping Voltage
vs. Peak Pulse Current
0.01
t
d
= I
PP
2
0
10
20
18
16
14
12
8
6
4
2
V
C
--
Clamping V
oltage
(V)
0
10
5
15
20
25
30
100
200
300
250
150
350
C
J
--
J
unction Capacitance (pF)
Fig. 5 Typical Junction Capacitance
0
2
1
3
4
6
5
V
R
-- Reverse Voltage (V)
PDF 
ZIP