Vishay Siliconix
SPICE Device Model Si1039X
P-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the -55 to 125C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
-55 to 125C
temperature ranges under the pulsed 0-V to 5-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
1
www.vishay.com
Document Number: 71771
S-50151
Rev. B, 07-Feb-05
Vishay Siliconix
SPICE Device Model Si1039X
SPECIFICATIONS (T
J
= 25
C UNLESS OTHERWISE NOTED)
Parameter Symbol
Test
Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
-250 A
0.82 V
On-State Drain Current
a
I
D(on)
V
DS
=
-5 V, V
GS
=
-4.5 V
25 A
V
GS
=
-4.5 V, I
D
=
-0.87 A
0.136 0.140
V
GS
=
-2.5 V, I
D
=
-0.75 A
0.187 0.180
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
-1.8 V, I
D
=
-0.20 A
0.255 0.230
Forward Transconductance
a
g
fs
V
DS
=
-10 V, I
D
=
-0.87 A
3.5 3.5 S
Diode Forward Voltage
a
V
SD
I
S
=
-0.14 A, V
GS
= 0 V
-0.74
-0.78
V
Dynamic
b
Total Gate Charge
Q
g
3.7
3.8
Gate-Source Charge
Q
gs
0.70
0.70
Gate-Drain Charge
Q
gd
V
DS
=
-6 V, V
GS
=
-4.5 V, I
D
=
-0.87 A
0.80 0.80
nC
Turn-On Delay Time
t
d(on)
12
15
Rise Time
t
r
18
20
Turn-Off Delay Time
t
d(off)
30
30
Fall Time
t
f
V
DD
=
-6 V, R
L
= 12
I
D
-0.50 A, V
GEN
=
-4.5 V, R
G
= 6
37 16
Source-Drain Reverse Recovery Time
t
rr
I
F
=
-0.14 A, di/dt = 100 A/s
21 20
ns
Notes
a. Pulse test; pulse width
300 s, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 71771
S-50151
Rev. B, 07-Feb-05
Vishay Siliconix
SPICE Device Model Si1039X
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25
C UNLESS OTHERWISE NOTED)
3
www.vishay.com
Document Number: 71771
S-50151
Rev. B, 07-Feb-05
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