FEATURES
D Ultra Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D Q
g
Optimized
D 100% R
g
Tested
APPLICATIONS
D Synchronous Buck Low-Side
- Notebook
- Server
- Workstation
D Synchronous Rectifier, POL
Si4336DY
Vishay Siliconix
Document Number: 72417
S-41795--Rev. B, 04-Oct-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
Q
g
(Typ)
30
0.00325 @ V
GS
= 10 V
25
36
30
0.0042 @ V
GS
= 4.5 V
22
36
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4336DY
Si4336DY-T1 (with Tape and Reel)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
25
17
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
20
13
Pulsed Drain Current (10 ms Pulse Width)
I
DM
70
A
Continuous Source Current (Diode Conduction)
a
I
S
2.9
1.3
Avalanche Current
L = 0.1 mH
I
AS
50
Maximum Power Dissipation
a
T
A
= 25_C
P
D
3.5
1.6
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
2.2
1
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t v 10 sec
R
29
35
Maximum Junction-to-Ambient
a
Steady State
R
thJA
67
80
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
13
16
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4336DY
Vishay Siliconix
www.vishay.com
2
Document Number: 72417
S-41795--Rev. B, 04-Oct-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
5
mA
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 25 A
0.0026
0.00325
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 22 A
0.0033
0.0042
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 25 A
110
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.72
1.1
V
Dynamic
b
Input Capacitance
C
iss
5600
Output Capacitance
C
oss
V
DS
= 15 V,
V
GS
= 0 V, f = 1 MHz
860
pF
Reverse Transfer Capacitance
C
rss
DS
GS
415
p
Total Gate Charge
Q
g
36
50
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 20 A
18
nC
Gate-Drain Charge
Q
gd
DS
GS
D
10
Gate Resistance
R
g
0.8
1.3
2.0
W
Turn-On Delay Time
t
d(on)
24
35
Rise Time
t
r
V
DD
= 15 V, R
L
= 15 W
16
25
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15 W
I
D
^ 1 A, V
GEN
= 10 V, R
g
= 6 W
90
140
ns
Fall Time
t
f
g
32
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
45
70
Notes
a.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
60
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
= 10 thru 4 V
25_C
T
C
= 125_C
-55_C
3 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
Si4336DY
Vishay Siliconix
Document Number: 72417
S-41795--Rev. B, 04-Oct-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1000
2000
3000
4000
5000
6000
7000
0
6
12
18
24
30
0.000
0.001
0.002
0.003
0.004
0.005
0
10
20
30
40
50
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
40
45
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
C
rss
V
DS
= 15 V
I
D
= 20 A
V
GS
= 10 V
I
D
= 25 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
V
GS
= 4.5 V
1.0
1.2
0.000
0.003
0.006
0.009
0.012
0.015
0
2
4
6
8
10
0.1
10
50
I
D
= 25 A
0.00
0.2
0.4
0.6
0.8
T
J
= 25_C
T
J
= 150_C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
C
oss
C
iss
1
r
DS
(
on)
-
On-Resiistance
(Normalized)
Si4336DY
Vishay Siliconix
www.vishay.com
4
Document Number: 72417
S-41795--Rev. B, 04-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
60
10
20
Power (W)
Single Pulse Power
Time (sec)
40
50
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
100
600
10
10
-1
10
-2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Safe Operating Area, Junction-to-Case
100
1
0.01
1
10
100
0.01
10
1 s
0.1
T
C
= 25_C
Single Pulse
10 ms
100 ms
dc
0.1
10
*Limited by r
DS(on)
10 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
u minimum V
GS
at which r
DS(on)
is
specified
Si4336DY
Vishay Siliconix
Document Number: 72417
S-41795--Rev. B, 04-Oct-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fe
ctive T
ransient
Thermal Impedance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?72417
.
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