FEATURES
D
TrenchFET
r
Power MOSFET
Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062--Rev. E, 26-May-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.018 @ V
GS
= 10 V
9.0
30
0.028 @ V
GS
= 4.5 V
7.3
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
G
S
N-Channel
MOSFET
D
Ordering Information: Si4416DY
Si4416DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
9.0
6.9
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
7.5
5.6
A
Pulsed Drain Current (10
m
s Pulse Width)
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.2
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.5
1.4
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.6
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
40
50
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
72
90
_
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
16
20
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4416DY
Vishay Siliconix
www.vishay.com
2
Document Number: 72266
S-31062--Rev. E, 26-May-03
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
_
C
25
m
A
On-State Drain Current
b
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
b
r
DS( )
V
GS
= 10 V, I
D
= 9.0 A
0.012
0.018
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 7.3 A
0.019
0.028
W
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 9.0 A
23
S
Diode Forward Voltage
b
V
SD
I
S
= 2.1 A, V
GS
= 0 V
1.2
V
Dynamic
a
Gate Charge
Q
g
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 9.0 A
14
20
Total Gate Charge
Q
gt
24
35
nC
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 9.0 A
4.5
nC
Gate-Drain Charge
Q
gd
DS
,
GS
,
D
5.9
Gate Resistance
R
g
0.2
1.0
2.4
W
Turn-On Delay Time
t
d(on)
16
20
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
10
20
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
34
50
ns
Fall Time
t
f
13
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/
m
s
50
90
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 10 thru 5 V
25
_
C
T
C
= 125
_
C
-55
_
C
3 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
4 V
Si4416DY
Vishay Siliconix
Document Number: 72266
S-31062--Rev. E, 26-May-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
0.00
0.02
0.04
0.06
0.08
0.10
0
10
20
30
40
50
0
2
4
6
8
10
0
5
10
15
20
25
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 9 A
V
GS
= 10 V
I
D
= 9 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
1.0
1.2
1
10
60
0.00
0.2
0.4
0.6
0.8
T
J
= 25
_
C
T
J
= 150
_
C
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
I
D
= 9 A
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 4.5 V
Si4416DY
Vishay Siliconix
www.vishay.com
4
Document Number: 72266
S-31062--Rev. E, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
40
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
100
600
10
10
-1
10
-2
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250
m
A
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
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