Si4833DY
Vishay Siliconix
Document Number: 70796
S-56941--Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-1
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.085 @ V
GS
= 10 V
"
3.5
30
0.180 @ V
GS
= 4.5 V
"
2.5
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
F
(V)
Diode Forward Voltage
I
F
(A)
30
0.5 V @ 1.0 A
1.4
A
K
K
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
A
S
G
D
K
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
30
V
Reverse Voltage (Schottky)
V
KA
30
V
Gate-Source Voltage (MOSFET)
V
GS
"
20
Continuous Drain Current
(T
J
= 150
_
C) (MOSFET)
a, b
T
A
= 25
_
C
I
D
"
3.5
A
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 70
_
C
I
D
"
2.8
A
Pulsed Drain Current (MOSFET)
I
DM
"
20
A
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
S
1.7
A
Average Foward Current (Schottky)
I
F
1.4
Pulsed Foward Current (Schottky)
I
FM
30
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25
_
C
P
2
W
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 70
_
C
P
D
1.3
W
Maximum Power Dissipation (Schottky)
a, b
T
A
= 25
_
C
P
D
1.9
W
Maximum Power Dissipation (Schottky)
a, b
T
A
= 70
_
C
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
v
10 sec)
a
MOSFET
R
62.5
_
C/W
Maximum Junction-to-Ambient (t
v
10 sec)
a
Schottky
R
thJA
65
_
C/W
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
R
thJA
90
_
C/W
Maximum Junction-to-Ambient (t = steady state)
a
Schottky
92
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v
10 sec.
Si4833DY
Vishay Siliconix
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Document Number: 70796
S-56941--Rev. B, 02-Nov-98
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55
_
C
25
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
15
A
Drain Source On State Resistance
a
r
DS(
)
V
GS
= 10 V, I
D
= 2.5 A
0.066
0.085
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
1.8 A
0.125
0.180
W
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 2.5 A
5.0
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
10 V V
10 V I
2 5 A
8.7
15
C
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 10 V, I
D
= 2.5 A
1.9
nC
Gate-Drain Charge
Q
gd
1.3
Turn-On Delay Time
t
d(on)
V
10 V R
10
W
7
15
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
W
I
1 A V
10 V R
6
W
9
18
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
14
27
ns
Fall Time
t
f
8
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
m
s
50
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.45
0.5
V
Forward Voltage Drop
V
F
I
F
= 1.0 A, T
J
= 125
_
C
0.36
0.42
V
M
i
R
L
k
C
I
V
r
= 30 V
0.004
0.100
A
Maximum Reverse Leakage Current
I
rm
V
r
= 30 V, T
J
= 100
_
C
0.7
10
mA
V
r
= 30 V, T
J
= 125
_
C
3.0
20
Junction Capacitance
C
T
V
r
= 10 V
62
pF
Si4833DY
Vishay Siliconix
Document Number: 70796
S-56941--Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
0
6
12
18
24
30
C
rss
C
oss
C
iss
0
4
8
12
16
20
0
2
4
6
8
125
_
C
T
C
= 55
_
C
25
_
C
0
2
4
6
8
10
0
2
4
6
8
10
0
0.08
0.16
0.24
0.32
0.40
0
3
6
9
12
15
V
GS
= 10 V
V
GS
= 4.5 V
0
4
8
12
16
20
0
2
4
6
8
V
GS
= 10, 9, 8, 7, 6 V
4 V
5 V
3 V
V
DS
= 10 V
I
D
= 2.5 A
V
GS
= 10 V
I
D
= 2.5 A
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
Si4833DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70796
S-56941--Rev. B, 02-Nov-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
0.4
0.2
0.0
0.2
0.4
0.6
0.8
50
25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
= 250
m
A
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
600
1
10
20
I
D
= 2.5 A
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
0
1
28
35
7
14
10
30
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.1
T
J
= 25
_
C
T
J
= 150
_
C
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
Time (sec)
21
100
Si4833DY
Vishay Siliconix
Document Number: 70796
S-56941--Rev. B, 02-Nov-98
www.vishay.com
S
FaxBack 408-970-5600
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SCHOTTKY
T
J
= 25
_
C
T
J
= 150
_
C
Junction Capacitance (pF)
0.5
0.6
0.01
1
3
Forward Voltage Drop
V
F
Forward Voltage Drop (V)
Forward Current (A)
I
F
0
0.1
0.2
0.3
0.4
Capacitance
0
50
100
150
200
250
0
4
8
12
16
20
V
KA
Reverse Voltage (V)
125
150
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
100
600
0.0001
1
20
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 92
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Reverse Current vs. Junction Temperature
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
T
J
Junction Temperature (
_
C)
Reverse Current (mA)
I
R
0
25
50
75
100
C
T
10 V
0.001
0.01
0.1
10
0.1
20 V
30 V
10
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