Si9926ADY
Vishay Siliconix
New Product
Document Number: 71633
S-04055--Rev. A, 25-Jun-01
www.vishay.com
1
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.030 @ V
GS
= 4.5 V
6
20
0.040 @ V
GS
= 2.5 V
5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
1
D
1
S
1
N-Channel MOSFET
G
2
D
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
"
12
V
_
T
A
= 25
_
C
6
4.8
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
5
3.8
Pulsed Drain Current
I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7
1.0
T
A
= 25
_
C
2.0
1.25
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.3
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
50
62.5
Maximum Junction-to-Ambient
a
Steady State
R
thJA
80
100
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
40
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si9926ADY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71633
S-04055--Rev. A, 25-Jun-01
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12 V
"
100
nA
V
DS
= 20 V, V
GS
= 0 V
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55
_
C
25
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 4.5
V
20
A
a
V
GS
= 4.5
V, I
D
= 6 A
0.023
0.030
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 5 A
0.030
0.040
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 6 A
22
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.7
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13
20
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 6 A
3
nC
Gate-Drain Charge
Q
gd
3.3
Turn-On Delay Time
t
d(on)
22
35
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
40
60
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
50
75
ns
Fall Time
t
f
20
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
m
s
40
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
6
12
18
24
30
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
= 5 thru 3 V
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
T
C
= 125
_
C
2.5 V
55
_
C
25
_
C
2 V
1.5 V
Si9926ADY
Vishay Siliconix
New Product
Document Number: 71633
S-04055--Rev. A, 25-Jun-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.02
0.04
0.06
0.08
0
6
12
18
24
30
0.0
0.9
1.8
2.7
3.6
4.5
0
3
6
9
12
15
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
300
600
900
1200
1500
1800
2100
0
4
8
12
16
20
Gate Charge
On-Resistance vs. Drain Current
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 6 A
On-Resistance (
r DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 6 A
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r DS(on)
W
)
V
GS
= 4.5 V
V
GS
= 2.5 V
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
= 150
_
C
T
J
= 25
_
C
I
D
= 6 A
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Si9926ADY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71633
S-04055--Rev. A, 25-Jun-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
60
100
20
40
Power (W)
Single Pulse Power
Time (sec)
10
3
10
2
1
10
600
10
1
10
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
3
10
2
1
10
1
10
4
2
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
10
80
0.1
0.001
0.05
0.02
Single Pulse
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
Threshold Voltage
T
J
Temperature (
_
C)
I
D
= 250
m
A
V
a
riance (V)
V
GS(th)
0.01
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