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Электронный компонент: SI9939DY

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Si9939DY
Vishay Siliconix
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
1
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
N Ch
l
30
0.05 @ V
GS
= 10 V
"
3.5
N-Channel
30
0.07 @ V
GS
= 6 V
"
3
0.08 @ V
GS
= 4.5 V
"
2.5
P Ch
l
30
0.10 @ V
GS
= 10 V
"
3.5
P-Channel
30
0.12 @ V
GS
= 6V
"
3
0.16 @ V
GS
= 4.5 V
"
2.5
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
S
2
G
2
D
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
30
30
V
Gate-Source Voltage
V
GS
"
20
"
20
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
"
3.5
"
3.5
A
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
"
2.8
"
2.8
A
Pulsed Drain Current
I
DM
"
20
"
20
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7
1.7
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.0
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.3
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N- or P- Channel
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
_
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
Si9939DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch
1.0
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
P-Ch
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Z
G
V l
D i C
I
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
P-Ch
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 15 V, V
GS
= 0 V, T
J
= 70
_
C
N-Ch
5
m
A
V
DS
= 15 V, V
GS
= 0 V, T
J
= 70
_
C
P-Ch
5
O S
D i C
b
I
V
DS
w
5 V, V
GS
= 10 V
N-Ch
20
A
On-State Drain Current
b
I
D(on)
V
DS
v
5 V, V
GS
= 10 V
P-Ch
20
A
On-State Drain Current
b
I
D(on)
V
DS
w
5 V, V
GS
= 4.5 V
N-Ch
3.5
A
V
DS
v
5 V, V
GS
= 4.5 V
P-Ch
3.5
D i S
O S
R
i
b
V
GS
= 10 V, I
D
= 3.5 A
N-Ch
0.04
0.05
W
D i S
O S
R
i
b
V
GS
= 10 V, I
D
= 3.5 A
P-Ch
0.074
0.10
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 6 V, I
D
= 3 A
N-Ch
0.045
0.07
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 6 V, I
D
= 3 A
P-Ch
0.090
0.12
W
V
GS
= 4.5 V, I
D
= 2.5 A
N-Ch
0.054
0.08
V
GS
= 4.5 V, I
D
= 2 A
P-Ch
0.115
0.16
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.5 A
N-Ch
9
S
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.5 A
P-Ch
6
S
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.75
1.2
V
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
P-Ch
0.75
1.2
V
Dynamic
a
Total Gate Charge
Q
g
N Ch
l
N-Ch
14
35
C
Total Gate Charge
Q
g
N-Channel
V
10 V V
10 V I
3 5 A
P-Ch
14.5
35
C
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 10 V, I
D
= 3.5 A
N-Ch
1.9
nC
Gate-Source Charge
Q
gs
P-Channel
V
DS
= 10 V,
V
GS
= 10 V
P-Ch
2.7
nC
Gate-Drain Charge
Q
gd
V
DS
= 10 V,
V
GS
= 10 V
I
D
= 3.5 A
N-Ch
2.8
Gate-Drain Charge
Q
gd
P-Ch
3.5
Turn-On Delay Time
t
d(on)
N Ch
l
N-Ch
10
30
Turn-On Delay Time
t
d(on)
N Ch
l
P-Ch
11
30
Rise Time
t
r
N-Channel
V
DD
= 15 V, R
L
= 15
W
N-Ch
10
40
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Ch
11
40
Turn-Off Delay Time
t
d(off)
P-Channel
V
15 V R
15
W
N-Ch
26
50
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Ch
30
50
ns
Fall Time
t
f
I
D
1
A,
V
GEN
10
V,
R
G
6
W
N-Ch
10
50
Fall Time
t
f
P-Ch
12
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.5 A, di/dt = 100 A/
m
s
N-Ch
60
120
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.5 A, di/dt = 100 A/
m
s
P-Ch
40
100
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
Si9939DY
Vishay Siliconix
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL
0
4
8
12
16
20
0
2
4
6
8
10
0
2
4
6
8
10
0
3
6
9
12
15
0
0.04
0.08
0.12
0.16
0.20
0
6
12
18
24
30
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
= 10 thru 5 V
3 V
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
V
GS
= 10 V
I
D
= 3.5 A
On-Resistance (
r
DS(on)
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
)
10 V
V
GS
= 4.5 V
4 V
0
4
8
12
16
20
0
1
2
3
4
5
25
_
C
55
_
C
T
C
= 125
_
C
0
200
400
600
800
1000
1200
1400
0
6
12
18
24
30
C
rss
C
oss
C
iss
0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
V
GS
= 10 V
I
D
= 3.5 A
6 V
2, 1 V
Si9939DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N CHANNEL
0
8
16
24
32
40
0.01
0.1
1
10
30
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
Time (sec)
Power (W)
V
ariance
(V)
V
GS(th)
0.4
1
10
20
1.2
0.8
1.6
0
T
J
= 150
_
C
T
J
= 25
_
C
0.8
0.6
0.4
0.2
0.0
0.2
0.4
50
25
0
25
50
75
100
125
150
I
D
= 250 mA
0
0.1
0.2
0.3
0.4
0
2
4
6
8
10
I
D
= 3.5 A
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
30
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Si9939DY
Vishay Siliconix
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P CHANNEL
0
4
8
12
16
20
0
2
4
6
8
10
0
2
4
6
8
10
0
3
6
9
12
15
0
0.1
0.2
0.3
0.4
0.5
0.6
0
4
8
12
16
20
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
= 10 thru 6V
3 V
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
V
GS
= 10 V
I
D
= 3.5 A
On-Resistance (
r
DS(on)
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
)
10 V
6 V
4 V
0
4
8
12
16
20
0
1
2
3
4
5
6
55
_
C
T
C
= 125
_
C
0
300
600
900
1200
1500
0
6
12
18
24
30
C
rss
C
oss
C
iss
0
0.4
0.8
1.2
1.6
2.0
50
0
50
100
150
V
GS
= 10 V
I
D
= 3.5 A
2, 1 V
V
GS
= 4.5 V
25
_
C
5 V
Si9939DY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
6
Document Number: 70146
S-00652--Rev. G, 27-Mar-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P CHANNEL
0
8
16
24
32
40
0.01
0.1
1
10
30
Single Pulse Power
Time (sec)
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
V
ariance (V)
V
GS(th)
0.4
1
10
20
0.8
1.0
0.6
1.4
0.2
T
J
= 150
_
C
T
J
= 25
_
C
0.4
0.2
0.0
0.2
0.4
0.6
0.8
50
0
50
100
150
I
D
= 250
A
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
I
D
= 3.5 A
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
30
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1.2