US1A thru US1M
Document Number 88768
05-Aug-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
1.0 A
V
RRM
50 V to 1000 V
I
FSM
30 A
t
rr
50 ns, 75 ns
V
F
1.0 V, 1.7 V
T
j
max.
150 C
Features
Low profile package
Ideal for automated placement
Glass passivated chip junction
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
T
A
= 25 C unless otherwise specified
Parameter
Symbol
US1A US1B US1D US1G US1J US1K US1M
Units
Device Marking Code
UA
UB
UD
UG
UJ
UK
UM
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at T
L
= 110 C
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating and storage temperature range
T
J
, T
STG
- 55 to + 150
C
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Document Number 88768
05-Aug-05
US1A thru US1M
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
T
A
= 25 C unless otherwise specified
Notes:
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
Parameter
Test condition
Symbol US1A
US1B
US1D US1G US1J US1K US1M
Units
Maximum instantaneous forward
voltage
at 1.0 A
(1)
V
F
1.0
1.7
V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 C
T
A
=100 C
I
R
10
50
A
Maximum reverse recovery time at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50
75
ns
Typical junction capacitance
at 4.0 V, 1 MHz
C
J
15
10
pF
Parameter
Symbol
US1A US1B US1D US1G US1J
US1K US1M
Units
Maximum thermal resistance
(1)
R
JA
R
JL
75
27
C/W
US1A thru US1M
Document Number 88768
05-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Ratings and Characteristics Curves
(T
A
= 25
C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
0.4
1.2
0
75
25
50
100
125
150
0.8
0.2
0.6
1.0
Resistive or Inductive Load
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Lead Temperature (C)
A
v
er
age F
o
r
w
ard Rectified C
u
rrent (A)
0
15
20
25
10
5
30
Number of Cycles at 60 Hz
Pe
a
k
F
o
r
w
ard S
u
rg
e C
u
rren
t (A)
1
10
100
T
L
= 110 C
8.3 ms Single Half Sine-Wave
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
US1A-US1G
100
10
1
0,1
0,01
0,3
0,5
0,7
0,9
1,1
1,3
1,5
1,7
Instantaneous Forward Voltage (V)
Instantaneo
u
s F
o
r
w
ard C
u
rrent (A)
Figure 4. Typical Reverse Leakage Characteristics
Figure 5. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Instantaneo
u
s Re
v
erse Leakage C
u
rrent (
A)
Percent of Rated Peak Reverse Voltage (%)
0
20
40
60
80
100
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
US1A-US1G
100
10
1
0,1
0,01
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
US1J-US1M
0,2
0,7
1,2
1,7
2,2
2,7
3,2
Instantaneous Forward Voltage (V)
Instan
taneo
u
s F
o
r
w
ard C
u
rrent (A)
100
10
1
0,1
0,01
T
j
= 150 C
T
j
= 125 C
T
j
= 100 C
T
j
= 25 C
US1J-US1M
Instantaneo
u
s Re
v
erse Leakage C
u
rrent (
A)
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0,1
0,01
0
20
40
60
80
100
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Document Number 88768
05-Aug-05
US1A thru US1M
Vishay General Semiconductor
Package outline dimensions in inches (millimeters)
Figure 7. Typical Junction Capacitance
T
J
= 25 C
f = 1.0 MHz
V
sig
= 50mVp-p
Reverse Voltage (V)
0.1
1
10
100
100
10
1
pF - J
u
nction Capacitance
US1A - US1G
US1J - US1M
Figure 8. Typical Transient Thermal Impedance
0.01
0.1
1
10
100
100
10
1
0.1
T
r
ansient
Ther
mal Impedance (C/
W
)
t - Pulse Duration (sec.)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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