*Extremely Fast Switching Speed
*Low Forward Voltage
*Very Small Conduction Losses
*Schottky Barrier Diodes Encapsulated in a SOT-23 Package
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
WSD705
WSD706
SMALL SIGNAL
SCHOTTKY DIODES
30m AMPERES
40 VOLTS
Unit:mm
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
1
2
3
http://www.weitron.com.tw
Surface Mount Schottky Barrier Diodes
Features:
Description:
SOT-23 Outline Dimensions
SOT-23
WEITRON
Maximum Ratings
(TJ=25 C Unless otherwise noted)
Characteristic
Reverse Voltage
Average Rectifier
Forward Current
Peak Repetitive
Forward Current
Rated VR, Square Wave,20KHz
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
IF(AV)
IFRM
TJ
Tstg
WSD705/706
Unit
40
30
200
-55 to +125
-55 to +150
Volts
mA
mA
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage (IR=100A)
Forward Voltage
IF=1.0mA
Total Capacitance
(VR=1.0V, f=1.0MHz)
Reverse Leakage
VR=10V
V(BR)R
VF
CT
IR
Min
Max
Unit
40
0.37
2.0
1.0
Volts
Volts
Adc
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
WSD705
WSD706
KL3
LD3
1
2
3
WSD705
WSD706
http://www.weitron.com.tw
Typ
-
-
-
-
-
-
-
-
WEITRON
C
C
P
F
WSD705
WSD706
http://www.weitron.com.tw
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m
10m
100m
pulse measurement
1
m
10
m
100
m
1000m
Typ.
F
O
R
W
A
R
D
C
U
R
R
E
N
T
:
I
F
(
A
)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
Ta= 75 C
Ta= 25 C
Ta=- 25 C
Ta
=
12
5
C
0
5
10
15
20
25
30
35
100n
10n
1n
pulse measurement
Typ.
100
m
10
m
1
m
R
E
V
E
R
S
E
C
U
R
R
E
N
T
:
I
R
(
A
)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
Ta
=
75 C
Ta
=
25 C
Ta
=
125 C
Ta=- 25 C
0
2
4
6
8
10
12
14
1
2
5
10
20
50
100
f
= 1MHz
Ta
= 25C
REVERSE VOLTAGE : V
R
(V)
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
E
E
N
T
E
R
M
I
N
A
L
S
:
C
T
(p
Fig. 3 Capacitance between
terminals characteristics
Electrical characteristic curves
(Ta = 25 C)
WEITRON
F
)
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