SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
12A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 12 Amps
*
Extremely Low Saturation Voltage E.g. 8mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
50m
at 3A
Partmarking Detail -
617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
12
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX617
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
15
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off
Current
I
CBO
0.3
100
nA
V
CB
=10V
Emitter Cut-Off
Current
I
EBO
0.3
100
nA
V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
0.3
100
nA
V
CES
=10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
150
14
100
230
300
400
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=4A, I
B
=50mA*
I
C
=5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89
1.0
V
I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.82
1.0
V
I
C
=3A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
150
415
450
320
240
80
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
Transition
Frequency
f
T
80
120
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
30
40
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
120
ns
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
Turn-Off Time
t
(off)
160
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX617
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