SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent H
FE
Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage
Complimentary Type -
FCX789A
Partmarking Detail -
688
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
10
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX688B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C)
PARAMETER
SYMBOL
Min
Typ
Max
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
12
V
I
C
=100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
12
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
A
Collector Cut-Off Current
I
CBO
0.1
A
V
CB
=9V
Emitter Cut-Off Current
I
EBO
0.1
A
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
40
60
180
350
400
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=1mA *
I
C
=0.1A, I
B
=0.5mA *
I
C
=1A, I
B
=10mA *
I
C
=3A, I
B
=10mA *
I
C
=4A, I
B
=50mA *
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=3A, I
B
=20mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
IC=3A, V
CE
=2V *
Static Forward Current
Transfer
Ratio
h
FE
500
400
100
I
C
=100mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance
C
ibo
200
pF
V
EB
=0.5V, f=1MHz
Output Capacitance
C
obo
40
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
t
off
40
500
ns
ns
I
C
=500mA, I
B1
=I
B2
=50mA
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FCX688B
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