NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 FEB 94
FEATURES
* 80 Volt V
CEO
* Gain of 50 at I
C
=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
4
V
Continuous Collector Current
I
C
500
mA
Power Dissipation at T
amb
=25C
P
tot
750
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +175
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
V
I
C
=100
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
V
I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
4
V
I
E
=100
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
A
V
CB
=80V, I
E
=0
Collector Cut-Off
Current
I
CES
0.1
A
V
CE
=60V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.2
V
IC=100mA, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
50
50
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
Transition
Frequency
f
T
100
MHz
I
C
=10mA, V
CE
=2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
E-Line
TO92 Compatible
MPSA06
3-76
C
B
E
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